All MOSFET. SI6473DQ Datasheet

 

SI6473DQ Datasheet and Replacement


   Type Designator: SI6473DQ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.08 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: TSSOP-8
 

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SI6473DQ Datasheet (PDF)

 ..1. Size:216K  vishay
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SI6473DQ

Si6473DQVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.0125 at VGS = - 4.5 V - 9.5RoHS0.016 at VGS = - 2.5 V - 20 - 8.5COMPLIANT0.0215 at VGS = - 1.8 V - 7.3S*GTSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common.D D1 8S S2 7Si6473DQS S3 6G D4

 9.1. Size:96K  vishay
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SI6473DQ

Si6475DQVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.011 at VGS = - 4.5 V - 10RoHS0.0135 at VGS = - 2.5 V - 12 - 9COMPLIANT0.017 at VGS = - 1.8 V - 8S*TSSOP-8G* Source Pins 2, 3, 6 and 7 must be tied common.D D1 8S S2 7Si6475DQS S3 6G D4 5T

Datasheet: SI6435ADQ , SI6443DQ , SI6459BDQ , SI6463BDQ , SI6465DQ , SI6466ADQ , SI6467BDQ , SI6469DQ , IRFP250 , SI6544BDQ , SI6562CDQ , SI6913DQ , SI6925ADQ , SI6926ADQ , SI6928DQ , SI6943BDQ , SI6954ADQ .

History: BL20N60-P

Keywords - SI6473DQ MOSFET datasheet

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