SI6473DQ Datasheet. Specs and Replacement

Type Designator: SI6473DQ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.08 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: TSSOP-8

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SI6473DQ datasheet

 ..1. Size:216K  vishay
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SI6473DQ

Si6473DQ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.0125 at VGS = - 4.5 V - 9.5 RoHS 0.016 at VGS = - 2.5 V - 20 - 8.5 COMPLIANT 0.0215 at VGS = - 1.8 V - 7.3 S* G TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. D D 1 8 S S 2 7 Si6473DQ S S 3 6 G D 4... See More ⇒

 9.1. Size:96K  vishay
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SI6473DQ

Si6475DQ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETs 0.011 at VGS = - 4.5 V - 10 RoHS 0.0135 at VGS = - 2.5 V - 12 - 9 COMPLIANT 0.017 at VGS = - 1.8 V - 8 S* TSSOP-8 G * Source Pins 2, 3, 6 and 7 must be tied common. D D 1 8 S S 2 7 Si6475DQ S S 3 6 G D 4 5 T... See More ⇒

Detailed specifications: SI6435ADQ, SI6443DQ, SI6459BDQ, SI6463BDQ, SI6465DQ, SI6466ADQ, SI6467BDQ, SI6469DQ, AO4407A, SI6544BDQ, SI6562CDQ, SI6913DQ, SI6925ADQ, SI6926ADQ, SI6928DQ, SI6943BDQ, SI6954ADQ

Keywords - SI6473DQ MOSFET specs

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