SI7160DP Datasheet. Specs and Replacement
Type Designator: SI7160DP 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 17.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 475 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
Package: POWERPAK-SO-8
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SI7160DP substitution
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SI7160DP datasheet
si7160dp.pdf
Si7160DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0087 at VGS = 10 V 20 Ultra-Low On-Resistance Using High 30 21 0.010 at VGS = 4.5 V Density TrenchFET Gen II Power 20 MOSFET Technology PowerPAK SO-8 Qg Optimized ... See More ⇒
si7164dp.pdf
New Product Si7164DP Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.00625 at VGS = 10 V 60 49.5 nC 60 100 % Rg Tested COMPLIANT 100 % UIS Tested PowerPAK SO-8 APPLICATIONS Primary Side Switch POL S 6.15 mm 5.15 mm D 1 S I... See More ⇒
Detailed specifications: SI7143DP, SI7145DP, SI7148DP, SI7149ADP, SI7149DP, SI7156DP, SI7157DP, SI7159DP, IRF3205, SI7164DP, SI7170DP, SI7172DP, SI7174DP, SI7178DP, SI7186DP, SI7190DP, SI7192DP
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