SI7164DP Spec and Replacement
Type Designator: SI7164DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 425 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00625 Ohm
Package: POWERPAK-SO-8
SI7164DP substitution
SI7164DP Specs
si7164dp.pdf
New Product Si7164DP Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.00625 at VGS = 10 V 60 49.5 nC 60 100 % Rg Tested COMPLIANT 100 % UIS Tested PowerPAK SO-8 APPLICATIONS Primary Side Switch POL S 6.15 mm 5.15 mm D 1 S I... See More ⇒
si7160dp.pdf
Si7160DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0087 at VGS = 10 V 20 Ultra-Low On-Resistance Using High 30 21 0.010 at VGS = 4.5 V Density TrenchFET Gen II Power 20 MOSFET Technology PowerPAK SO-8 Qg Optimized ... See More ⇒
Detailed specifications: SI7145DP , SI7148DP , SI7149ADP , SI7149DP , SI7156DP , SI7157DP , SI7159DP , SI7160DP , IRF3205 , SI7170DP , SI7172DP , SI7174DP , SI7178DP , SI7186DP , SI7190DP , SI7192DP , SI7194DP .
Keywords - SI7164DP MOSFET specs
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