SI7172DP Datasheet. Specs and Replacement

Type Designator: SI7172DP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: POWERPAK-SO-8

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SI7172DP datasheet

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SI7172DP

New Product Si7172DP Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)g Qg (Typ.) TrenchFET Power MOSFET 0.070 at VGS = 10 V 25 Low Thermal Resistance PowerPAK Package RoHS 200 34 0.076 at VGS = 6 V 24 COMPLIANT 100 % Rg Tested 100 % UIS Tested PowerPAK SO-8 APPLICATIONS Pri... See More ⇒

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SI7172DP

New Product Si7174DP Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET RoHS 0.007 at VGS = 10 V 75 47.5 nC 60 100 % Rg Tested COMPLIANT 100 % UIS Tested APPLICATIONS PowerPAK SO-8 Primary Side Switch Synchronous Rectification S 6.15 mm 5.15 ... See More ⇒

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SI7172DP

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 9.3. Size:479K  vishay
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SI7172DP

New Product Si7178DP Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.014 at VGS = 10 V 100 47.5 nC 60 100 % Rg Tested COMPLIANT 100 % UIS Tested APPLICATIONS PowerPAK SO-8 Primary Side Switch POL S 6.15 mm 5.15 mm Intermediate... See More ⇒

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Detailed specifications: SI7149ADP, SI7149DP, SI7156DP, SI7157DP, SI7159DP, SI7160DP, SI7164DP, SI7170DP, IRF740, SI7174DP, SI7178DP, SI7186DP, SI7190DP, SI7192DP, SI7194DP, SI7196DP, SI7212DN

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