All MOSFET. SI7172DP Datasheet

 

SI7172DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI7172DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: POWERPAK-SO-8

 SI7172DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI7172DP Datasheet (PDF)

 ..1. Size:508K  vishay
si7172dp.pdf

SI7172DP
SI7172DP

New ProductSi7172DPVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)g Qg (Typ.) TrenchFET Power MOSFET0.070 at VGS = 10 V 25 Low Thermal Resistance PowerPAK PackageRoHS200 340.076 at VGS = 6 V 24COMPLIANT 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8APPLICATIONS Pri

 9.1. Size:511K  vishay
si7174dp.pdf

SI7172DP
SI7172DP

New ProductSi7174DPVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Power MOSFETRoHS0.007 at VGS = 10 V75 47.5 nC60 100 % Rg Tested COMPLIANT 100 % UIS TestedAPPLICATIONSPowerPAK SO-8 Primary Side Switch Synchronous RectificationS 6.15 mm 5.15

 9.2. Size:491K  vishay
si7170dp.pdf

SI7172DP
SI7172DP

Si7170DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.0034 at VGS = 10 V 40g30 29 nC 100 % Rg and Avalanche Tested0.0043 at VGS = 4.5 V 40g Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIONS

 9.3. Size:479K  vishay
si7178dp.pdf

SI7172DP
SI7172DP

New ProductSi7178DPVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.014 at VGS = 10 V100 47.5 nC60 100 % Rg Tested COMPLIANT 100 % UIS TestedAPPLICATIONSPowerPAK SO-8 Primary Side Switch POL S 6.15 mm 5.15 mm Intermediate

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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