SI7186DP Specs and Replacement
Type Designator: SI7186DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 325 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
Package: POWERPAK-SO-8
SI7186DP substitution
SI7186DP Specs
si7186dp.pdf
Si7186DP Vishay Siliconix N-Channel 80-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0125 at VGS = 10 V 80 TrenchFET Power MOSFET 32g 46 nC 100 % Rg Tested 100 % UIS Tested PowerPAK SO-8 APPLICATIONS Primary Side Switch S 6.15 mm 5.15 mm 1 POL S D ... See More ⇒
Detailed specifications: SI7157DP , SI7159DP , SI7160DP , SI7164DP , SI7170DP , SI7172DP , SI7174DP , SI7178DP , IRF540 , SI7190DP , SI7192DP , SI7194DP , SI7196DP , SI7212DN , SI7216DN , SI7220DN , SI7222DN .
History: NTRV4101P
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