All MOSFET. SI7212DN Datasheet

 

SI7212DN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI7212DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 4.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.8 nC
   trⓘ - Rise Time: 12 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: POWERPAK-1212-8

 SI7212DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI7212DN Datasheet (PDF)

 ..1. Size:545K  vishay
 si7212dn.pdf

SI7212DN SI7212DN

Si7212DNVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.036 at VGS = 10 V 6.8 100 % Rg Tested30 70.039 at VGS = 4.5 V 6.6 Space Savings Optimized for Fast Switching Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Synchronous Re

 9.1. Size:573K  vishay
 si7218dn.pdf

SI7212DN SI7212DN

Si7218DNVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)Available0.025 at VGS = 10 V 24 TrenchFET Power MOSFET30 5 nC0.033 at VGS = 4.5 V 21APPLICATIONS Synchronous RectificationPowerPAK 1212-8 Notebook System Power POLS1 3.30 mm

 9.2. Size:571K  vishay
 si7216dn.pdf

SI7212DN SI7212DN

Si7216DNVishay SiliconixDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available TrenchFET Power MOSFET0.032 at VGS = 10 V 6e40 5.5 nC Low Thermal Resistance PowerPAK 0.039 at VGS = 4.5 V 5ePackage with Small Size and Low 1.07 mmProfile 100 % Rg and UIS t

 9.3. Size:560K  vishay
 si7214dn.pdf

SI7212DN SI7212DN

Si7214DNVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.04 at VGS = 10 V 6.430 TrenchFET Power MOSFET0.047 at VGS = 4.5 V 5.9 100 % Rg Tested Optimized for High Efficiency ApplicationsAPPLICATIONSPowerPAK 1212-8 Synchronous Rectificatio

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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