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SI7252DP Specs and Replacement


   Type Designator: SI7252DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 311 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: POWERPAK-SO-8
 

 SI7252DP substitution

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SI7252DP Specs

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SI7252DP

New Product Si7252DP Vishay Siliconix Dual N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. 100 % Rg and UIS Tested ID (A)a Qg (Typ.) Material categorization 0.017 at VGS = 10 V 36.7 For definitions of compliance please see 0.018 at VGS = 7.5 V 100 35.7 12.2 nC www.vishay.com/doc?99912 0.020 at VGS = 6 V... See More ⇒

Detailed specifications: SI7220DN , SI7222DN , SI7224DN , SI7228DN , SI7230DN , SI7232DN , SI7234DP , SI7236DP , IRFB4115 , SI7270DP , SI7272DP , SI7288DP , SI7302DN , SI7308DN , SI7309DN , SI7315DN , SI7317DN .

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