SI7252DP Datasheet. Specs and Replacement

Type Designator: SI7252DP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 311 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: POWERPAK-SO-8

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SI7252DP datasheet

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SI7252DP

New Product Si7252DP Vishay Siliconix Dual N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. 100 % Rg and UIS Tested ID (A)a Qg (Typ.) Material categorization 0.017 at VGS = 10 V 36.7 For definitions of compliance please see 0.018 at VGS = 7.5 V 100 35.7 12.2 nC www.vishay.com/doc?99912 0.020 at VGS = 6 V... See More ⇒

Detailed specifications: SI7220DN, SI7222DN, SI7224DN, SI7228DN, SI7230DN, SI7232DN, SI7234DP, SI7236DP, IRFB4115, SI7270DP, SI7272DP, SI7288DP, SI7302DN, SI7308DN, SI7309DN, SI7315DN, SI7317DN

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