All MOSFET. SI7252DP Datasheet

 

SI7252DP Datasheet and Replacement


   Type Designator: SI7252DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 311 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: POWERPAK-SO-8
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SI7252DP Datasheet (PDF)

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SI7252DP

New ProductSi7252DPVishay SiliconixDual N-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. 100 % Rg and UIS TestedID (A)a Qg (Typ.) Material categorization:0.017 at VGS = 10 V 36.7For definitions of compliance please see 0.018 at VGS = 7.5 V 100 35.7 12.2 nCwww.vishay.com/doc?999120.020 at VGS = 6 V

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MTN10N65FP | CRTD063N04L | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

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