SI7252DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SI7252DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 10.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 36.7 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 311 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: POWERPAK-SO-8
SI7252DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI7252DP Datasheet (PDF)
si7252dp.pdf
New ProductSi7252DPVishay SiliconixDual N-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. 100 % Rg and UIS TestedID (A)a Qg (Typ.) Material categorization:0.017 at VGS = 10 V 36.7For definitions of compliance please see 0.018 at VGS = 7.5 V 100 35.7 12.2 nCwww.vishay.com/doc?999120.020 at VGS = 6 V
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRFP254
History: IRFP254
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