All MOSFET. SI7317DN Datasheet

 

SI7317DN Datasheet and Replacement


   Type Designator: SI7317DN
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 1.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2.8 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: POWERPAK-1212-8
 

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SI7317DN Datasheet (PDF)

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SI7317DN

Si7317DNVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V)RDS(on) () Max. ID (A)f Qg (Typ.) PowerPAK Package- Low Thermal Resistance1.2 at VGS = - 10 V - 2.8- 150 6.5 nC 100 % Rg and UIS Tested1.3 at VGS = - 6 V - 2.7 Material categorization:AvailableFor definitions of compliance please seeww

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SI7317DN

Si7315DNVishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. Low Thermal Resistance PowerPAKID (A)e Qg (Typ.)Package with Small Size0.315 at VGS = - 10 V - 8.9 100 % Rg and UIS Tested- 150 15.4 nC0.350 at VGS = - 6 V - 8.7 Material categorization:AvailableFor definitions of complia

Datasheet: SI7252DP , SI7270DP , SI7272DP , SI7288DP , SI7302DN , SI7308DN , SI7309DN , SI7315DN , 2N7000 , SI7322DN , SI7326DN , SI7328DN , SI7336ADP , SI7342DP , SI7344DP , SI7356ADP , SI7358ADP .

History: IXTP56N15T

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