SI7370DP Datasheet and Replacement
Type Designator: SI7370DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 9.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 12 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: POWERPAK-SO-8
- MOSFET Cross-Reference Search
SI7370DP Datasheet (PDF)
si7370dp.pdf

Si7370DPVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.011 at VGS = 10 V 15.8 TrenchFET Power MOSFET 60 0.013 at VGS = 6 V 14.5 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Tested
si7370adp.pdf

New ProductSi7370ADPVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)b, c Qg (Typ.) TrenchFET Power MOSFETRoHS0.010 at VGS = 10 V 16 100 % Rg Tested COMPLIANT 60 450.0125 at VGS = 6 V 14.4 100 % UIS TestedAPPLICATIONSPowerPAK SO-8 Primary Side Switch for 24 V DC/DC Applications
si7374dp.pdf

Si7374DPVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0055 at VGS = 10 V 24 TrenchFET Power MOSFET30 36 nC0.0066 at VGS = 4.5 V 24 100 % Rg TestedSCHOTTKY PRODUCT SUMMARY APPLICATIONSVSD (V)VDS (V) IF (A) DC/
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SFB052N90C3 | BUZ84 | IRLR024 | AON6794 | MPSA65M990 | CED05N8 | BL10N70-A
Keywords - SI7370DP MOSFET datasheet
SI7370DP cross reference
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History: SFB052N90C3 | BUZ84 | IRLR024 | AON6794 | MPSA65M990 | CED05N8 | BL10N70-A



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