SI7370DP Datasheet. Specs and Replacement

Type Designator: SI7370DP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: POWERPAK-SO-8

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SI7370DP datasheet

 ..1. Size:297K  vishay
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SI7370DP

Si7370DP Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.011 at VGS = 10 V 15.8 TrenchFET Power MOSFET 60 0.013 at VGS = 6 V 14.5 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Tested ... See More ⇒

 8.1. Size:97K  vishay
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SI7370DP

New Product Si7370ADP Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)b, c Qg (Typ.) TrenchFET Power MOSFET RoHS 0.010 at VGS = 10 V 16 100 % Rg Tested COMPLIANT 60 45 0.0125 at VGS = 6 V 14.4 100 % UIS Tested APPLICATIONS PowerPAK SO-8 Primary Side Switch for 24 V DC/DC Applications... See More ⇒

 9.1. Size:490K  vishay
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SI7370DP

Si7374DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0055 at VGS = 10 V 24 TrenchFET Power MOSFET 30 36 nC 0.0066 at VGS = 4.5 V 24 100 % Rg Tested SCHOTTKY PRODUCT SUMMARY APPLICATIONS VSD (V) VDS (V) IF (A) DC/... See More ⇒

Detailed specifications: SI7336ADP, SI7342DP, SI7344DP, SI7356ADP, SI7358ADP, SI7366DP, SI7368DP, SI7370ADP, IRLB4132, SI7374DP, SI7380ADP, SI7382DP, SI7384DP, SI7386DP, SI7388DP, SI7390DP, SI7392ADP

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