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SI7370DP Specs and Replacement


   Type Designator: SI7370DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: POWERPAK-SO-8
 

 SI7370DP substitution

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SI7370DP Specs

 ..1. Size:297K  vishay
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SI7370DP

Si7370DP Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.011 at VGS = 10 V 15.8 TrenchFET Power MOSFET 60 0.013 at VGS = 6 V 14.5 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Tested ... See More ⇒

 8.1. Size:97K  vishay
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SI7370DP

New Product Si7370ADP Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)b, c Qg (Typ.) TrenchFET Power MOSFET RoHS 0.010 at VGS = 10 V 16 100 % Rg Tested COMPLIANT 60 45 0.0125 at VGS = 6 V 14.4 100 % UIS Tested APPLICATIONS PowerPAK SO-8 Primary Side Switch for 24 V DC/DC Applications... See More ⇒

 9.1. Size:490K  vishay
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SI7370DP

Si7374DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0055 at VGS = 10 V 24 TrenchFET Power MOSFET 30 36 nC 0.0066 at VGS = 4.5 V 24 100 % Rg Tested SCHOTTKY PRODUCT SUMMARY APPLICATIONS VSD (V) VDS (V) IF (A) DC/... See More ⇒

Detailed specifications: SI7336ADP , SI7342DP , SI7344DP , SI7356ADP , SI7358ADP , SI7366DP , SI7368DP , SI7370ADP , SKD502T , SI7374DP , SI7380ADP , SI7382DP , SI7384DP , SI7386DP , SI7388DP , SI7390DP , SI7392ADP .

Keywords - SI7370DP MOSFET specs

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