All MOSFET. SI7601DN Datasheet

 

SI7601DN Datasheet and Replacement


   Type Designator: SI7601DN
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 11.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.2 nC
   trⓘ - Rise Time: 112 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0192 Ohm
   Package: POWERPAK-1212-8
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SI7601DN Datasheet (PDF)

 ..1. Size:556K  vishay
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SI7601DN

New ProductSi7601DNVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) ()ID (A) Qg (Typ.) Halogen-free Option Available0.019 at VGS = - 4.5 V - 16e TrenchFET Power MOSFET- 20 16.2 nC Low Thermal Resistance PowerPAKRoHS0.031 at VGS = - 2.5 V - 16eCOMPLIANTPackage with Small Size and Low 1.07 mm Profile PWM Optim

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SI7601DN

Si7606DNVishay SiliconixN-Channel 125-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.108 at VGS = 10 V 14.5 TrenchFET Power MOSFET125 9.1 nC0.115 at VGS = 4.5 V 14 Optimized for Fast Switching Applications Low Thermal Resistance PowerPAK Package PowerPAK 1212-8

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SM6A12NSFP | FCPF7N60YDTU

Keywords - SI7601DN MOSFET datasheet

 SI7601DN cross reference
 SI7601DN equivalent finder
 SI7601DN lookup
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