All MOSFET. SI7620DN Datasheet

 

SI7620DN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI7620DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.126 Ohm
   Package: POWERPAK-1212-8

 SI7620DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI7620DN Datasheet (PDF)

 ..1. Size:559K  vishay
 si7620dn.pdf

SI7620DN SI7620DN

Si7620DNVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.126 at VGS = 10 V 150 13 9.5 nC 100 % Rg TestedRoHSCOMPLIANT 100 % UIS TestedAPPLICATIONSPowerPAK 1212-8 Primary Side SwitchS3.30 mm 3.30 mmD1S2S3G4D8DG7D

 9.1. Size:105K  vishay
 si7621dn.pdf

SI7620DN SI7620DN

Si7621DNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.090 at VGS = - 4.5 V - 4c TrenchFET Power MOSFET: 2.5 V Rated- 20 3.8 nC0.180 at VGS = - 2.5 V - 4c PowerPAK Package- Low Thermal Resistance- Low 1.07 mm Profile 100 Rg Tested

 9.2. Size:126K  vishay
 si7625dn.pdf

SI7620DN SI7620DN

New ProductSi7625DNVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.007 at VGS = - 10 V - 35d TrenchFET Power MOSFET- 30 39.5 nC 100% Rg Tested0.011 at VGS = - 4.5 V - 35d 100% UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK 1

 9.3. Size:579K  vishay
 si7623dn.pdf

SI7620DN SI7620DN

New ProductSi7623DNVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0038 at VGS = - 10 V - 35a Material categorization:0.0053 at VGS = - 4.5 V - 20- 35a 55.5 nCFor definitions of compliance please see0.0090 at VGS = - 2.5 V

 9.4. Size:576K  vishay
 si7629dn.pdf

SI7620DN SI7620DN

New ProductSi7629DNVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0046 at VGS = - 10 V - 35a Material categorization:- 20 0.0062 at VGS = - 4.5 V - 35a 59 nCFor definitions of compliance please see0.0117 at VGS = - 2.5 V - 35awww.v

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