SI7620DN Datasheet. Specs and Replacement

Type Designator: SI7620DN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.126 Ohm

Package: POWERPAK-1212-8

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SI7620DN datasheet

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SI7620DN

Si7620DN Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.126 at VGS = 10 V 150 13 9.5 nC 100 % Rg Tested RoHS COMPLIANT 100 % UIS Tested APPLICATIONS PowerPAK 1212-8 Primary Side Switch S 3.30 mm 3.30 mm D 1 S 2 S 3 G 4 D 8 D G 7 D ... See More ⇒

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SI7620DN

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SI7620DN

New Product Si7625DN Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.007 at VGS = - 10 V - 35d TrenchFET Power MOSFET - 30 39.5 nC 100% Rg Tested 0.011 at VGS = - 4.5 V - 35d 100% UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 1... See More ⇒

 9.3. Size:579K  vishay
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SI7620DN

New Product Si7623DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0038 at VGS = - 10 V - 35a Material categorization 0.0053 at VGS = - 4.5 V - 20 - 35a 55.5 nC For definitions of compliance please see 0.0090 at VGS = - 2.5 V... See More ⇒

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Detailed specifications: SI7540DP, SI7601DN, SI7611DN, SI7613DN, SI7615ADN, SI7615DN, SI7617DN, SI7619DN, IRF540N, SI7621DN, SI7623DN, SI7625DN, SI7629DN, SI7633DP, SI7634BDP, SI7635DP, SI7636DP

Keywords - SI7620DN MOSFET specs

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