All MOSFET. SI7742DP Datasheet

 

SI7742DP Datasheet and Replacement


   Type Designator: SI7742DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 775 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: POWERPAK-SO-8
 

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SI7742DP Datasheet (PDF)

 ..1. Size:472K  vishay
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SI7742DP

Si7742DPVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0035 at VGS = 10 V 60 SkyFET Monolithic TrenchFET 30 34 nC0.0045 at VGS = 4.5 V Power MOSFET and Schottky Diode60 100 % Rg Tested 100 % UIS TestedPowerPAK

 9.1. Size:157K  vishay
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SI7742DP

New ProductSi7748DPVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a Qg (Typ.) SkyFET Monolithic TrenchFET RoHS0.0048 at VGS = 10 V 50Power MOSFET and Schottky DiodeCOMPLIANT 30 27.8 nC0.0066 at VGS = 4.5 V 50 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8

Datasheet: SI7682DP , SI7686DP , SI7703EDN , SI7716ADN , SI7718DN , SI7720DN , SI7726DN , SI7738DP , IRFP260 , SI7748DP , SI7758DP , SI7772DP , SI7774DP , SI7784DP , SI7788DP , SI7790DP , SI7792DP .

History: SI8410DB | IPB80N06S2L-11 | AP30T10GK

Keywords - SI7742DP MOSFET datasheet

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