All MOSFET. SI7758DP Datasheet

 

SI7758DP Datasheet and Replacement


   Type Designator: SI7758DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 920 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: POWERPAK-SO-8
 

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SI7758DP Datasheet (PDF)

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SI7758DP

New ProductSi7758DPVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)DefinitionRoHS 0.0029 at VGS = 10 V 60 SkyFET Monolithic TrenchFET Gen III COMPLIANT 30 46 nC0.0038 at VGS = 4.5 V 60Power MOSFET and Schottky Diode 100 % Rg

Datasheet: SI7703EDN , SI7716ADN , SI7718DN , SI7720DN , SI7726DN , SI7738DP , SI7742DP , SI7748DP , K3569 , SI7772DP , SI7774DP , SI7784DP , SI7788DP , SI7790DP , SI7792DP , SI7794DP , SI7802DN .

History: BLP02N06-Q | RQ1A070ZPTR | IPL65R1K0C6S | BLP02N06-T | PM561BA | BLP065N10GL-D | IPL65R190E6

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