SI7758DP Datasheet. Specs and Replacement

Type Designator: SI7758DP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 920 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: POWERPAK-SO-8

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SI7758DP datasheet

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SI7758DP

New Product Si7758DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition RoHS 0.0029 at VGS = 10 V 60 SkyFET Monolithic TrenchFET Gen III COMPLIANT 30 46 nC 0.0038 at VGS = 4.5 V 60 Power MOSFET and Schottky Diode 100 % Rg... See More ⇒

Detailed specifications: SI7703EDN, SI7716ADN, SI7718DN, SI7720DN, SI7726DN, SI7738DP, SI7742DP, SI7748DP, IRF9540N, SI7772DP, SI7774DP, SI7784DP, SI7788DP, SI7790DP, SI7792DP, SI7794DP, SI7802DN

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.