SI7758DP PDF and Equivalents Search

 

SI7758DP PDF Specs and Replacement


   Type Designator: SI7758DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 920 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: POWERPAK-SO-8
 

 SI7758DP substitution

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SI7758DP PDF Specs

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SI7758DP

New Product Si7758DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition RoHS 0.0029 at VGS = 10 V 60 SkyFET Monolithic TrenchFET Gen III COMPLIANT 30 46 nC 0.0038 at VGS = 4.5 V 60 Power MOSFET and Schottky Diode 100 % Rg... See More ⇒

Detailed specifications: SI7703EDN , SI7716ADN , SI7718DN , SI7720DN , SI7726DN , SI7738DP , SI7742DP , SI7748DP , 2N7002 , SI7772DP , SI7774DP , SI7784DP , SI7788DP , SI7790DP , SI7792DP , SI7794DP , SI7802DN .

History: BUK7575-100A | BUK7628-55 | PHP4ND40E | STM4639

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