All MOSFET. SI7758DP Datasheet

 

SI7758DP Datasheet and Replacement


   Type Designator: SI7758DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 34.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 920 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: POWERPAK-SO-8
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SI7758DP Datasheet (PDF)

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SI7758DP

New ProductSi7758DPVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)DefinitionRoHS 0.0029 at VGS = 10 V 60 SkyFET Monolithic TrenchFET Gen III COMPLIANT 30 46 nC0.0038 at VGS = 4.5 V 60Power MOSFET and Schottky Diode 100 % Rg

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FQP2N50 | LKK47-06C5 | TSM4424CS | SSH8N55 | VBA5102M | BRCS200P03DP | SLF13N50A

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