All MOSFET. MDA0531EURH Datasheet


MDA0531EURH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDA0531EURH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.7 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 115 pF

Maximum Drain-Source On-State Resistance (Rds): 0.019 Ohm

Package: DFN2X5

MDA0531EURH Transistor Equivalent Substitute - MOSFET Cross-Reference Search


MDA0531EURH Datasheet (PDF)

0.1. mda0531eurh.pdf Size:362K _magnachip


 MDA0531E Common-Drain N-Channel Trench MOSFET 30V, 8A, 19mΩ General Description Features The MDA0531E uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides low on-state resistance, high I = 8.0A @ V = 10V D GS switching performance and excellent reliability. Low RDS(ON) R and low gate charge operation with gate voltage < 19mΩ @ V = 4.5V DS(ON) GS as low

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