All MOSFET. MDA0531EURH Datasheet

 

MDA0531EURH Datasheet and Replacement


   Type Designator: MDA0531EURH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10.7 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: DFN2X5
 

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MDA0531EURH Datasheet (PDF)

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MDA0531EURH

MDA0531E Common-Drain N-Channel Trench MOSFET 30V, 8A, 19m General Description Features The MDA0531E uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides low on-state resistance, high I = 8.0A @ V = 10V D GSswitching performance and excellent reliability. Low RDS(ON) R and low gate charge operation with gate voltage

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History: FMI16N60E

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