MDD1051RH Specs and Replacement
Type Designator: MDD1051RH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 405 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: TO-252
MDD1051RH substitution
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MDD1051RH datasheet
mdd1051rh.pdf
MDD1051 Single N-channel Trench MOSFET 150V, 28A, 46m General Description Features The MDD1051 uses advanced MagnaChip s MOSFET V = 150V DS Technology, which provides high performance in on-state I = 28A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDD1051 is suitable device for Synchronous ... See More ⇒
mdd1051rh.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MDD1051RH FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
Detailed specifications: PHD45N03LTA , RU190N08 , RU190N08Q , RU190N08R , RU190N08S , MDA0531EURH , MDC0531EURH , MDCA0418EURH , 2N60 , MDD14N25CRH , MDD1501RH , MDD1502RH , MDD1503RH , MDD1504RH , MDD1752RH , MDD1754RH , MDD1851RH .
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