All MOSFET. MDD1051RH Datasheet

 

MDD1051RH Datasheet and Replacement


   Type Designator: MDD1051RH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 405 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: TO-252
 

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MDD1051RH Datasheet (PDF)

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MDD1051RH

MDD1051 Single N-channel Trench MOSFET 150V, 28A, 46m General Description Features The MDD1051 uses advanced MagnaChips MOSFET V = 150V DSTechnology, which provides high performance in on-state I = 28A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDD1051 is suitable device for Synchronous

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MDD1051RH

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MDD1051RHFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

Datasheet: PHD45N03LTA , RU190N08 , RU190N08Q , RU190N08R , RU190N08S , MDA0531EURH , MDC0531EURH , MDCA0418EURH , 7N60 , MDD14N25CRH , MDD1501RH , MDD1502RH , MDD1503RH , MDD1504RH , MDD1752RH , MDD1754RH , MDD1851RH .

History: MDD1502RH | CEB10N65 | IRF8308M | MSF5N50 | 2SK3211L | FQA8N100C | NCE65TF180F

Keywords - MDD1051RH MOSFET datasheet

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