All MOSFET. MDD1051RH Datasheet

 

MDD1051RH Datasheet and Replacement


   Type Designator: MDD1051RH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 405 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: TO-252
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MDD1051RH Datasheet (PDF)

 ..1. Size:316K  magnachip
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MDD1051RH

MDD1051 Single N-channel Trench MOSFET 150V, 28A, 46m General Description Features The MDD1051 uses advanced MagnaChips MOSFET V = 150V DSTechnology, which provides high performance in on-state I = 28A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDD1051 is suitable device for Synchronous

 ..2. Size:208K  inchange semiconductor
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MDD1051RH

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MDD1051RHFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

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History: IPP055N03LG | HLML6401 | MTN3055L3 | STM6915 | GP2M004A065XG | AP0704GMT | AP85T03GH-HF

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