MDD1051RH Datasheet. Specs and Replacement

Type Designator: MDD1051RH  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 405 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: TO-252

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MDD1051RH datasheet

 ..1. Size:316K  magnachip
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MDD1051RH

MDD1051 Single N-channel Trench MOSFET 150V, 28A, 46m General Description Features The MDD1051 uses advanced MagnaChip s MOSFET V = 150V DS Technology, which provides high performance in on-state I = 28A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDD1051 is suitable device for Synchronous ... See More ⇒

 ..2. Size:208K  inchange semiconductor
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MDD1051RH

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MDD1051RH FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

Detailed specifications: PHD45N03LTA, RU190N08, RU190N08Q, RU190N08R, RU190N08S, MDA0531EURH, MDC0531EURH, MDCA0418EURH, AO3407, MDD14N25CRH, MDD1501RH, MDD1502RH, MDD1503RH, MDD1504RH, MDD1752RH, MDD1754RH, MDD1851RH

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