All MOSFET. MDI1752TH Datasheet

 

MDI1752TH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDI1752TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26.4 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 243 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-251

 MDI1752TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDI1752TH Datasheet (PDF)

 ..1. Size:693K  magnachip
 mdi1752th.pdf

MDI1752TH MDI1752TH

MDI1752 N-Channel Trench MOSFET 40V, 50A, 8.0m General Description Features The MDI1752 uses advanced MagnaChips trench V = 40V DSMOSFET Technology to provide high performance in on- I = 50A @V = 10V D GS state resistance, switching performance and reliability R DS(ON)

 ..2. Size:320K  inchange semiconductor
 mdi1752th.pdf

MDI1752TH MDI1752TH

isc N-Channel MOSFET Transistor MDI1752THFEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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