All MOSFET. MDI4N60BTH Datasheet

 

MDI4N60BTH Datasheet and Replacement


   Type Designator: MDI4N60BTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 67.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10.4 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-251
 

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MDI4N60BTH Datasheet (PDF)

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MDI4N60BTH

MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0General Description Features The MDD/I4N60B uses advanced Magnachips MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 3.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 2.0 @ VGS = 10V MDD/I4N60B is suitable device for SMPS, HID and general Applications

Datasheet: MDH3331RP , MDHT3N40URH , MDHT4N20YURH , MDHT4N25URH , MDHT7N25URH , MDI1752TH , MDI1N60STH , MDI2N60 , 20N50 , MDI5N40TH , MDI6N60BTH , MDI6N65BTH , MDIB6N70CTH , MDIS1501TH , MDIS1502TH , MDIS1903TH , MDIS2N60TH .

History: 2N5908 | 2N7002VC

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