All MOSFET. MDI4N60BTH Datasheet


MDI4N60BTH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDI4N60BTH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 67.5 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 60 pF

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: TO-251

MDI4N60BTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MDI4N60BTH Datasheet (PDF)

1.1. mdi4n60bth.pdf Size:842K _magnachip


 MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0Ω Ω Ω Ω General Description Features The MDD/I4N60B uses advanced Magnachip’s MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 3.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) ≤ 2.0Ω @ VGS = 10V MDD/I4N60B is suitable device for SMPS, HID and general Applications

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

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