MDI4N60BTH Datasheet and Replacement
Type Designator: MDI4N60BTH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 67.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO-251
MDI4N60BTH substitution
MDI4N60BTH Datasheet (PDF)
mdd4n60brh mdi4n60bth.pdf
MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0General Description Features The MDD/I4N60B uses advanced Magnachips MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 3.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 2.0 @ VGS = 10V MDD/I4N60B is suitable device for SMPS, HID and general Applications
Datasheet: MDH3331RP , MDHT3N40URH , MDHT4N20YURH , MDHT4N25URH , MDHT7N25URH , MDI1752TH , MDI1N60STH , MDI2N60 , 20N50 , MDI5N40TH , MDI6N60BTH , MDI6N65BTH , MDIB6N70CTH , MDIS1501TH , MDIS1502TH , MDIS1903TH , MDIS2N60TH .
History: FSS923AOD | IXFT6N100Q
Keywords - MDI4N60BTH MOSFET datasheet
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History: FSS923AOD | IXFT6N100Q
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