MDI4N60BTH Datasheet. Specs and Replacement

Type Designator: MDI4N60BTH  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 67.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-251

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MDI4N60BTH datasheet

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MDI4N60BTH

MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0 General Description Features The MDD/I4N60B uses advanced Magnachip s MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 3.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 2.0 @ VGS = 10V MDD/I4N60B is suitable device for SMPS, HID and general Applications... See More ⇒

Detailed specifications: MDH3331RP, MDHT3N40URH, MDHT4N20YURH, MDHT4N25URH, MDHT7N25URH, MDI1752TH, MDI1N60STH, MDI2N60, NCEP15T14, MDI5N40TH, MDI6N60BTH, MDI6N65BTH, MDIB6N70CTH, MDIS1501TH, MDIS1502TH, MDIS1903TH, MDIS2N60TH

Keywords - MDI4N60BTH MOSFET specs

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