All MOSFET. MDI4N60BTH Datasheet

 

MDI4N60BTH MOSFET. Datasheet pdf. Equivalent

Type Designator: MDI4N60BTH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 67.5 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 60 pF

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: TO-251

MDI4N60BTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDI4N60BTH Datasheet (PDF)

1.1. mdi4n60bth.pdf Size:842K _magnachip

MDI4N60BTH
MDI4N60BTH

 MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0Ω Ω Ω Ω General Description Features The MDD/I4N60B uses advanced Magnachip’s MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 3.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) ≤ 2.0Ω @ VGS = 10V MDD/I4N60B is suitable device for SMPS, HID and general Applications

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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MOSFET: CMB1405 | CMP1405 | JCS4N60F | JCS4N60C | JCS4N60B | JCS4N60S | JCS4N60R | JCS4N60V | MDU2657 | OSG55R190PF | OSG55R190FF | OSG55R190DF | OSG55R190AF | PTP04N04N | RU7088R3 |

 

 

 
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