All MOSFET. MDIS3N40TH Datasheet

 

MDIS3N40TH Datasheet and Replacement


   Type Designator: MDIS3N40TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: TO-251-VS
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MDIS3N40TH Datasheet (PDF)

 ..1. Size:1013K  magnachip
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MDIS3N40TH

MDIS3N40 N-Channel MOSFET 400V, 2.0A, 3.4 General Description Features The MDIS3N40 uses advanced Magnachips V = 400V DSMOSFET Technology, which provides low on-state I = 2.0A @V = 10V D GSresistance, high switching performance and excellent RDS(ON) 3.4 @VGS = 10V quality. MDIS3N40 is suitable device for SMPS, HID and general purpose applications

 ..2. Size:320K  inchange semiconductor
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MDIS3N40TH

isc N-Channel MOSFET Transistor MDIS3N40THFEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: RU13N65R | BUK6218-40C | SRT10N160LD | SSW65R190S2 | APT10021JFLL | SM4186T9RL | NP180N04TUJ

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