MDIS3N40TH Datasheet and Replacement
Type Designator: MDIS3N40TH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 27 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: TO-251-VS
MDIS3N40TH substitution
MDIS3N40TH Datasheet (PDF)
mdis3n40th.pdf

MDIS3N40 N-Channel MOSFET 400V, 2.0A, 3.4 General Description Features The MDIS3N40 uses advanced Magnachips V = 400V DSMOSFET Technology, which provides low on-state I = 2.0A @V = 10V D GSresistance, high switching performance and excellent RDS(ON) 3.4 @VGS = 10V quality. MDIS3N40 is suitable device for SMPS, HID and general purpose applications
mdis3n40th.pdf

isc N-Channel MOSFET Transistor MDIS3N40THFEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
Datasheet: MDI6N60BTH , MDI6N65BTH , MDIB6N70CTH , MDIS1501TH , MDIS1502TH , MDIS1903TH , MDIS2N60TH , MDIS2N65BTH , SKD502T , MDIS4N65BTH , MDIS5N40TH , MDIS5N50TH , MDP10N50TH , MDP10N60GTH , MDP11N60TH , MDP12N50BTH , MDP12N50FTH .
History: IRF7821PBF | IXFR30N110P
Keywords - MDIS3N40TH MOSFET datasheet
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History: IRF7821PBF | IXFR30N110P



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