MDIS3N40TH Datasheet. Specs and Replacement
Type Designator: MDIS3N40TH 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 27 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: TO-251-VS
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MDIS3N40TH datasheet
mdis3n40th.pdf
MDIS3N40 N-Channel MOSFET 400V, 2.0A, 3.4 General Description Features The MDIS3N40 uses advanced Magnachip s V = 400V DS MOSFET Technology, which provides low on-state I = 2.0A @V = 10V D GS resistance, high switching performance and excellent RDS(ON) 3.4 @VGS = 10V quality. MDIS3N40 is suitable device for SMPS, HID and general purpose applications... See More ⇒
mdis3n40th.pdf
isc N-Channel MOSFET Transistor MDIS3N40TH FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 3.4 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
Detailed specifications: MDI6N60BTH, MDI6N65BTH, MDIB6N70CTH, MDIS1501TH, MDIS1502TH, MDIS1903TH, MDIS2N60TH, MDIS2N65BTH, 18N50, MDIS4N65BTH, MDIS5N40TH, MDIS5N50TH, MDP10N50TH, MDP10N60GTH, MDP11N60TH, MDP12N50BTH, MDP12N50FTH
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