MDP16N50GTH Datasheet. Specs and Replacement

Type Designator: MDP16N50GTH  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 204.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 88.5 nS

Cossⓘ - Output Capacitance: 226 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO-220

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MDP16N50GTH datasheet

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 mdf16n50gth mdp16n50gth.pdf pdf_icon

MDP16N50GTH

MDP16N50G / MDF16N50G N-Channel MOSFET 500V, 16.0 A, 0.35 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChip s MOSFET Technology, which provides low on- ID = 16A @VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.35 @VGS = 10V quality. These devices are suitable d... See More ⇒

 ..2. Size:288K  inchange semiconductor
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MDP16N50GTH

isc N-Channel MOSFET Transistor MDP16N50GTH FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.35 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒

Detailed specifications: MDP11N60TH, MDP12N50BTH, MDP12N50FTH, MDP13N50BTH, MDP13N50GTH, MDP14N25CTH, MDP14N25CTP, MDP15N60GTH, IRFZ46N, MDP1723TH, MDP18N50BTH, MDP1901TH, MDP1921TH, MDP1922TH, MDP1923TH, MDP1930TH, MDP1932TH

Keywords - MDP16N50GTH MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.