CED05N8 Datasheet. Specs and Replacement
Type Designator: CED05N8 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 71 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm
Package: TO-251
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CED05N8 datasheet
ced05n8.pdf
CED05N8/CEU05N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 800V, 3.4A, RDS(ON) = 2.9 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc ... See More ⇒
ceu05n65 ced05n65.pdf
CED05N65/CEU05N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 4A, RDS(ON) = 2.4 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless... See More ⇒
ced05p03 ceu05p03.pdf
CED05P03/CEU05P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -15A, RDS(ON) = 70m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE ... See More ⇒
Detailed specifications: APQ84SN06A, APQ84SN06AD, APQ84SN06AH, APQ9ESN20AB, CEB05N8, CEB110P03, CEB18N5, CEB30N3, IRFB3607, CED5175, CED6042, CEDM7001, CEDM7001E, CEDM7001VL, CEDM7002AE, CEDM7004, CEDM7004VL
Keywords - CED05N8 MOSFET specs
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