RU1088R Datasheet and Replacement
Type Designator: RU1088R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 510 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO-220
RU1088R substitution
RU1088R Datasheet (PDF)
ru1088r.pdf
RU1088R N-Channel Advanced Power MOSFET Features Pin Description 100V/80A RDS (ON)=10m(Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested Lead Free and Green Available Applications Switching Application Systems N-Channel MOSFET Absolute Maximum Rating
Datasheet: HY75N075T , HY75N10T , HY7N80T , HY80N075T , HY80N07T , HY8N50T , HY8N65T , HY8N70T , IRFB4110 , RU120N15Q , RU120N15R , RU140N10R , RU16P8M4 , RU190N10Q , RU190N10R , RU190N10S , RU1C001UN .
History: CEB20P06
Keywords - RU1088R MOSFET datasheet
RU1088R cross reference
RU1088R equivalent finder
RU1088R lookup
RU1088R substitution
RU1088R replacement
History: CEB20P06
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