RU1088R Datasheet. Specs and Replacement

Type Designator: RU1088R  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 510 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO-220

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RU1088R datasheet

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RU1088R

RU1088R N-Channel Advanced Power MOSFET Features Pin Description 100V/80A RDS (ON)=10m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested Lead Free and Green Available Applications Switching Application Systems N-Channel MOSFET Absolute Maximum Rating... See More ⇒

Detailed specifications: HY75N075T, HY75N10T, HY7N80T, HY80N075T, HY80N07T, HY8N50T, HY8N65T, HY8N70T, IRLZ44N, RU120N15Q, RU120N15R, RU140N10R, RU16P8M4, RU190N10Q, RU190N10R, RU190N10S, RU1C001UN

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