All MOSFET. PHD14NQ20T Datasheet


PHD14NQ20T MOSFET. Datasheet pdf. Equivalent

Type Designator: PHD14NQ20T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 128 pF

Maximum Drain-Source On-State Resistance (Rds): 0.23 Ohm

Package: DPAK

PHD14NQ20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search


PHD14NQ20T Datasheet (PDF)

1.1. phd14nq20t php14nq20t.pdf Size:269K _philips


PHP/PHB/PHD14NQ20T TrenchMOS™ standard level FET Rev. 03 — 11 March 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP14NQ20T in SOT78 (TO-220AB) PHB14NQ20T in SOT404 (D2-PAK) PHD14NQ20T in SOT428 (D-PAK). 1.2 Features Low on-state resistance Fast s

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .


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