PHD14NQ20T Datasheet. Specs and Replacement

Type Designator: PHD14NQ20T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 128 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: DPAK

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PHD14NQ20T datasheet

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PHD14NQ20T

PHP/PHB/PHD14NQ20T TrenchMOS standard level FET Rev. 03 11 March 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHP14NQ20T in SOT78 (TO-220AB) PHB14NQ20T in SOT404 (D2-PAK) PHD14NQ20T in SOT428 (D-PAK). 1.2 Features Low on-state resistance Fast s... See More ⇒

Detailed specifications: PHB23NQ10LT, PHB38N02LT, PHB4ND40E, PHB73N06T, PHB78NQ03LT, PHB95NQ04LT, PHB96NQ03LT, PHD108NQ03LT, IRLZ44N, PHD16N03LT, PHD16N03T, PHD18NQ10T, PHD21N06LT, PHD22NQ20T, PHD23NQ10T, PHD34NQ10T, PHD36N03LT

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.