All MOSFET. PHD14NQ20T Datasheet

 

PHD14NQ20T Datasheet and Replacement


   Type Designator: PHD14NQ20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 128 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: DPAK
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PHD14NQ20T Datasheet (PDF)

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PHD14NQ20T

PHP/PHB/PHD14NQ20TTrenchMOS standard level FETRev. 03 11 March 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHP14NQ20T in SOT78 (TO-220AB)PHB14NQ20T in SOT404 (D2-PAK)PHD14NQ20T in SOT428 (D-PAK).1.2 Features Low on-state resistance Fast s

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FKG1020 | SML601R3AN | FDS86252 | AP60T03GH | IXTA220N075T7 | HCS60R260ST | HMS8N65D

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