PHD14NQ20T Specs and Replacement
Type Designator: PHD14NQ20T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 128 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: DPAK
PHD14NQ20T substitution
PHD14NQ20T datasheet
phd14nq20t php14nq20t.pdf
PHP/PHB/PHD14NQ20T TrenchMOS standard level FET Rev. 03 11 March 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHP14NQ20T in SOT78 (TO-220AB) PHB14NQ20T in SOT404 (D2-PAK) PHD14NQ20T in SOT428 (D-PAK). 1.2 Features Low on-state resistance Fast s... See More ⇒
Detailed specifications: PHB23NQ10LT , PHB38N02LT , PHB4ND40E , PHB73N06T , PHB78NQ03LT , PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , IRLZ44N , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , PHD22NQ20T , PHD23NQ10T , PHD34NQ10T , PHD36N03LT .
Keywords - PHD14NQ20T MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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