PHX20N06T PDF and Equivalents Search

 

PHX20N06T Specs and Replacement


   Type Designator: PHX20N06T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO-220F
 

 PHX20N06T substitution

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PHX20N06T datasheet

 ..1. Size:91K  philips
 phx20n06t.pdf pdf_icon

PHX20N06T

PHX20N06T N-channel TrenchMOS standard level FET Rev. 01 16 February 2004 Product data M3D308 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS technology. 1.2 Features Standard level compatible Isolated package. 1.3 Applications DC motor control Synchronous rectification DC-to... See More ⇒

Detailed specifications: PHU66NQ03LT , PHU77NQ03T , PHU78NQ03LT , PHW7N60 , PHW80NQ10T , PHX14NQ20T , PHX18NQ11T , PHX18NQ20T , AO3400A , PHX23NQ10T , PHX23NQ11T , PHX27NQ11T , PHX45NQ11T , PHX8NQ11T , PHX9NQ20T , PJD1NA50 , PJD1NA60 .

History: STN4402 | RFD8P06E | DH060N07D | NTUD3169CZ | HAT1020R | BLF879P | 2SK3977

Keywords - PHX20N06T MOSFET specs

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