All MOSFET. PHX20N06T Datasheet

 

PHX20N06T Datasheet and Replacement


   Type Designator: PHX20N06T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO-220F
 
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PHX20N06T Datasheet (PDF)

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PHX20N06T

PHX20N06TN-channel TrenchMOS standard level FETRev. 01 16 February 2004 Product dataM3D3081. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a fully isolated plasticpackage using TrenchMOS technology.1.2 Features Standard level compatible Isolated package.1.3 Applications DC motor control Synchronous rectification DC-to

Datasheet: PHU66NQ03LT , PHU77NQ03T , PHU78NQ03LT , PHW7N60 , PHW80NQ10T , PHX14NQ20T , PHX18NQ11T , PHX18NQ20T , RU6888R , PHX23NQ10T , PHX23NQ11T , PHX27NQ11T , PHX45NQ11T , PHX8NQ11T , PHX9NQ20T , PJD1NA50 , PJD1NA60 .

History: 2SK4082-S17 | 2SK2273 | IPD78CN10NG | IRFW624A

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