PHX20N06T Datasheet. Specs and Replacement

Type Designator: PHX20N06T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO-220F

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PHX20N06T datasheet

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PHX20N06T

PHX20N06T N-channel TrenchMOS standard level FET Rev. 01 16 February 2004 Product data M3D308 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS technology. 1.2 Features Standard level compatible Isolated package. 1.3 Applications DC motor control Synchronous rectification DC-to... See More ⇒

Detailed specifications: PHU66NQ03LT, PHU77NQ03T, PHU78NQ03LT, PHW7N60, PHW80NQ10T, PHX14NQ20T, PHX18NQ11T, PHX18NQ20T, 60N06, PHX23NQ10T, PHX23NQ11T, PHX27NQ11T, PHX45NQ11T, PHX8NQ11T, PHX9NQ20T, PJD1NA50, PJD1NA60

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