TK12P60W Datasheet. Specs and Replacement

Type Designator: TK12P60W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm

Package: DPAK

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TK12P60W datasheet

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TK12P60W

TK12P60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12P60W TK12P60W TK12P60W TK12P60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.265 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

 ..2. Size:262K  inchange semiconductor
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TK12P60W

Isc N-Channel MOSFET Transistor TK12P60W FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta... See More ⇒

Detailed specifications: TK10V60W, TK11A65W, TK11P65W, TK11Q65W, TK11S10N1L, TK12A60W, TK12E60W, TK12J60W, 2N7002, TK12Q60W, TK12V60W, TK14A65W, TK14A65W5, TK14C65W, TK14C65W5, TK14E65W, TK14E65W5

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