All MOSFET. TK12P60W Datasheet


TK12P60W MOSFET. Datasheet pdf. Equivalent

Type Designator: TK12P60W

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V

Maximum Drain Current |Id|: 11.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 25 nC

Rise Time (tr): 23 nS

Drain-Source Capacitance (Cd): 23 pF

Maximum Drain-Source On-State Resistance (Rds): 0.34 Ohm

Package: DPAK

TK12P60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search


TK12P60W Datasheet (PDF)

0.1. tk12p60w.pdf Size:243K _toshiba


TK12P60W MOSFETs Silicon N-Channel MOS (DTMOS) TK12P60W TK12P60W TK12P60W TK12P60W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) E

0.2. tk12p60w.pdf Size:262K _inchange_semiconductor


Isc N-Channel MOSFET Transistor TK12P60W ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta


Datasheet: TK10V60W , TK11A65W , TK11P65W , TK11Q65W , TK11S10N1L , TK12A60W , TK12E60W , TK12J60W , IRF530 , TK12Q60W , TK12V60W , TK14A65W , TK14A65W5 , TK14C65W , TK14C65W5 , TK14E65W , TK14E65W5 .


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