All MOSFET. TK12P60W Datasheet

 

TK12P60W MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK12P60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 100 W
   Maximum Drain-Source Voltage |Vds|: 600 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V
   Maximum Drain Current |Id|: 11.5 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 25 nC
   Rise Time (tr): 23 nS
   Drain-Source Capacitance (Cd): 23 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.34 Ohm
   Package: DPAK

 TK12P60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK12P60W Datasheet (PDF)

 ..1. Size:242K  toshiba
 tk12p60w.pdf

TK12P60W TK12P60W

TK12P60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12P60WTK12P60WTK12P60WTK12P60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 ..2. Size:262K  inchange semiconductor
 tk12p60w.pdf

TK12P60W TK12P60W

Isc N-Channel MOSFET Transistor TK12P60WFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , FQPF7N80C , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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