All MOSFET. TK12P60W Datasheet

 

TK12P60W MOSFET. Datasheet pdf. Equivalent

Type Designator: TK12P60W

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V

Maximum Drain Current |Id|: 11.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 25 nC

Rise Time (tr): 23 nS

Drain-Source Capacitance (Cd): 23 pF

Maximum Drain-Source On-State Resistance (Rds): 0.34 Ohm

Package: DPAK

TK12P60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK12P60W Datasheet (PDF)

0.1. tk12p60w.pdf Size:243K _toshiba

TK12P60W
TK12P60W

TK12P60W MOSFETs Silicon N-Channel MOS (DTMOS) TK12P60W TK12P60W TK12P60W TK12P60W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) E

0.2. tk12p60w.pdf Size:262K _inchange_semiconductor

TK12P60W
TK12P60W

Isc N-Channel MOSFET Transistor TK12P60W ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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