All MOSFET. TK12Q60W Datasheet

 

TK12Q60W Datasheet and Replacement


   Type Designator: TK12Q60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: IPAK
 

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TK12Q60W Datasheet (PDF)

 ..1. Size:244K  toshiba
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TK12Q60W

TK12Q60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12Q60WTK12Q60WTK12Q60WTK12Q60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 ..2. Size:233K  inchange semiconductor
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TK12Q60W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK12Q60WITK12Q60WFEATURESLow drain-source on-resistance:RDS(on) 0.34.Enhancement mode:Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =2

Datasheet: TK11A65W , TK11P65W , TK11Q65W , TK11S10N1L , TK12A60W , TK12E60W , TK12J60W , TK12P60W , IRF630 , TK12V60W , TK14A65W , TK14A65W5 , TK14C65W , TK14C65W5 , TK14E65W , TK14E65W5 , TK14G65W .

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