TK12Q60W MOSFET Datasheet: N-Ch, 600V, 11.5A. Full specification with pinout and replacement list

TK12Q60W Specs and Replacement

   Type Designator: TK12Q60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: IPAK

TK12Q60W substitution

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TK12Q60W datasheet

..1. Size:244K toshiba
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TK12Q60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12Q60W TK12Q60W TK12Q60W TK12Q60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.265 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

..2. Size:233K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK12Q60W ITK12Q60W FEATURES Low drain-source on-resistance RDS(on) 0.34 . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

Detailed specifications: TK11A65W , TK11P65W , TK11Q65W , TK11S10N1L , TK12A60W , TK12E60W , TK12J60W , TK12P60W , IRF640N , TK12V60W , TK14A65W , TK14A65W5 , TK14C65W , TK14C65W5 , TK14E65W , TK14E65W5 , TK14G65W .