TMD18N20Z PDF and Equivalents Search

 

TMD18N20Z Specs and Replacement


   Type Designator: TMD18N20Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: DPAK
 

 TMD18N20Z substitution

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TMD18N20Z datasheet

 ..1. Size:437K  trinnotech
 tmd18n20z tmu18n20z.pdf pdf_icon

TMD18N20Z

TMD18N20Z(G)/TMU18N20Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) MAX 100% avalanche tested 200V 18A ... See More ⇒

Detailed specifications: TMAN20N60A , TMAN23N50 , TMAN23N50A , TMAN7N90 , TMAN8N80 , TMAN9N90 , TMAN9N90AZ , TMD16N25Z , IRF740 , TMD2N40 , TMD2N60AZ , TMD2N60Z , TMD2N65AZ , TMD3N40ZG , TMD3N50AZ , TMD3N50Z , TMD3N80G .

Keywords - TMD18N20Z MOSFET specs

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