TMD18N20Z Datasheet and Replacement
Type Designator: TMD18N20Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: DPAK
TMD18N20Z substitution
TMD18N20Z Datasheet (PDF)
tmd18n20z tmu18n20z.pdf

TMD18N20Z(G)/TMU18N20Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) MAX 100% avalanche tested 200V 18A
Datasheet: TMAN20N60A , TMAN23N50 , TMAN23N50A , TMAN7N90 , TMAN8N80 , TMAN9N90 , TMAN9N90AZ , TMD16N25Z , IRF740 , TMD2N40 , TMD2N60AZ , TMD2N60Z , TMD2N65AZ , TMD3N40ZG , TMD3N50AZ , TMD3N50Z , TMD3N80G .
History: IPB60R165CP | VBE1606 | HF10N60 | NDT410EL | IRFS4010-7P | BUK7M12-40E | APTM120DA30CT1G
Keywords - TMD18N20Z MOSFET datasheet
TMD18N20Z cross reference
TMD18N20Z equivalent finder
TMD18N20Z lookup
TMD18N20Z substitution
TMD18N20Z replacement
History: IPB60R165CP | VBE1606 | HF10N60 | NDT410EL | IRFS4010-7P | BUK7M12-40E | APTM120DA30CT1G



LIST
Last Update
MOSFET: APJ14N65T | APJ14N65P | APJ14N65F | APJ14N65D | APN9N50D | AP65R190 | APJ50N65T | APJ50N65P | APJ50N65F | APJ30N65T | APJ30N65P | APJ30N65F | AP65R650 | APG60N10S | APG120N04NF | AP8G06S
MDT7N65 | MDT70N03 | MDT60NF06D | MDT60N10D | MDT60N06D | MDT5N65 | MPG100N08P | MPG100N07S | MPG100N07P | MPG100N06S | MPG100N06P | MPF9N20 | MPF8N65 | MPF5N65 | MPF50N25 | MPF40N25 | MPF3N150 | MPF2N60 | MDT50N06D | MDT40N10D | MDT40N06D | MDT30N10D | MDT30N10 | MDT30N06L | MDT2N60 | MDT20P04D
Popular searches
mj21194 | oc71 transistor | 2n3440 | bc550c | 2n3904 transistor datasheet | p75nf75 | d880 transistor | 2sc1845