TMD18N20Z Spec and Replacement
Type Designator: TMD18N20Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: DPAK
TMD18N20Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMD18N20Z Specs
tmd18n20z tmu18n20z.pdf
TMD18N20Z(G)/TMU18N20Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) MAX 100% avalanche tested 200V 18A ... See More ⇒
Detailed specifications: TMAN20N60A , TMAN23N50 , TMAN23N50A , TMAN7N90 , TMAN8N80 , TMAN9N90 , TMAN9N90AZ , TMD16N25Z , IRF740 , TMD2N40 , TMD2N60AZ , TMD2N60Z , TMD2N65AZ , TMD3N40ZG , TMD3N50AZ , TMD3N50Z , TMD3N80G .
History: CS3205A8 | CEP60N06G | HFP4N90 | MTM13227 | UTT50P10 | JCS4N60F | 2SK962-01
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