All MOSFET. TMD18N20Z Datasheet

 

TMD18N20Z MOSFET. Datasheet pdf. Equivalent

Type Designator: TMD18N20Z

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 94 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 18 nC

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 180 pF

Maximum Drain-Source On-State Resistance (Rds): 0.17 Ohm

Package: DPAK

TMD18N20Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TMD18N20Z Datasheet (PDF)

1.1. tmd18n20z tmu18n20z.pdf Size:437K _trinnotech

TMD18N20Z TMD18N20Z

TMD18N20Z(G)/TMU18N20Z(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on) MAX  100% avalanche tested 200V 18A <0.17W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD18N20Z / TMU18N20Z D-PAK/I-PAK TMD18N20Z / TMU18N20Z RoHS TMD18N20ZG / TMU18N20ZG D-PAK/I-P

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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