TMD18N20Z Datasheet. Specs and Replacement

Type Designator: TMD18N20Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: DPAK

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TMD18N20Z datasheet

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TMD18N20Z

TMD18N20Z(G)/TMU18N20Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) MAX 100% avalanche tested 200V 18A ... See More ⇒

Detailed specifications: TMAN20N60A, TMAN23N50, TMAN23N50A, TMAN7N90, TMAN8N80, TMAN9N90, TMAN9N90AZ, TMD16N25Z, IRF840, TMD2N40, TMD2N60AZ, TMD2N60Z, TMD2N65AZ, TMD3N40ZG, TMD3N50AZ, TMD3N50Z, TMD3N80G

Keywords - TMD18N20Z MOSFET specs

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