TMD630Z Datasheet. Specs and Replacement

Type Designator: TMD630Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: DPAK

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TMD630Z datasheet

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TMD630Z

TMD630Z(G)/TMU630Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A ... See More ⇒

Detailed specifications: TMD4N65AZ, TMD4N65Z, TMD5N40ZG, TMD5N50, TMD5N50G, TMD5N60AZ, TMD5N60Z, AOD434, IRFB4227, TMD6N65G, TMD6N70, TMD7N60Z, TMD7N65AZ, TMD7N65Z, TMD830, TMD830AZ, TMD830Z

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