TMD630Z Spec and Replacement
Type Designator: TMD630Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 86 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: DPAK
TMD630Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TMD630Z Specs
tmd630z tmu630z.pdf
TMD630Z(G)/TMU630Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A ... See More ⇒
Detailed specifications: TMD4N65AZ , TMD4N65Z , TMD5N40ZG , TMD5N50 , TMD5N50G , TMD5N60AZ , TMD5N60Z , AOD434 , 2N7000 , TMD6N65G , TMD6N70 , TMD7N60Z , TMD7N65AZ , TMD7N65Z , TMD830 , TMD830AZ , TMD830Z .
History: IPP60R190P6 | AP02N90JB
Keywords - TMD630Z MOSFET specs
TMD630Z cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IPP60R190P6 | AP02N90JB
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