TMD630Z PDF and Equivalents Search

 

TMD630Z Specs and Replacement


   Type Designator: TMD630Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: DPAK
 

 TMD630Z substitution

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TMD630Z datasheet

 ..1. Size:453K  trinnotech
 tmd630z tmu630z.pdf pdf_icon

TMD630Z

TMD630Z(G)/TMU630Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 9A ... See More ⇒

Detailed specifications: TMD4N65AZ , TMD4N65Z , TMD5N40ZG , TMD5N50 , TMD5N50G , TMD5N60AZ , TMD5N60Z , AOD434 , 2N7000 , TMD6N65G , TMD6N70 , TMD7N60Z , TMD7N65AZ , TMD7N65Z , TMD830 , TMD830AZ , TMD830Z .

Keywords - TMD630Z MOSFET specs

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