TMD7N60Z Datasheet. Specs and Replacement

Type Designator: TMD7N60Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 104 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: DPAK

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TMD7N60Z datasheet

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TMD7N60Z

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TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TM... See More ⇒

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TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A ... See More ⇒

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TMD7N65Z(G)/TMU7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A ... See More ⇒

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Detailed specifications: TMD5N50, TMD5N50G, TMD5N60AZ, TMD5N60Z, AOD434, TMD630Z, TMD6N65G, TMD6N70, 7N65, TMD7N65AZ, TMD7N65Z, TMD830, TMD830AZ, TMD830Z, TMD8N25Z, TMD8N50Z, TMD8N60AZ

Keywords - TMD7N60Z MOSFET specs

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