TMD7N60Z PDF and Equivalents Search

 

TMD7N60Z Specs and Replacement

Type Designator: TMD7N60Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 104 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: DPAK

TMD7N60Z substitution

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TMD7N60Z datasheet

 ..1. Size:457K  trinnotech
 tmd7n60z tmu7n60z.pdf pdf_icon

TMD7N60Z

TMD7N60Z(G)/TMU7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 600V 7A ... See More ⇒

 7.1. Size:559K  cn wuxi unigroup
 tma7n60h tmc7n60h tmd7n60h tmu7n60h.pdf pdf_icon

TMD7N60Z

TMA7N60H, TMC7N60H, TMD7N60H, TMU7N60H Wuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TM... See More ⇒

 8.1. Size:461K  trinnotech
 tmd7n65az tmu7n65az.pdf pdf_icon

TMD7N60Z

TMD7N65AZ(G)/TMU7N65AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A ... See More ⇒

 8.2. Size:463K  trinnotech
 tmd7n65z tmu7n65z.pdf pdf_icon

TMD7N60Z

TMD7N65Z(G)/TMU7N65Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 650V 6.5A ... See More ⇒

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Detailed specifications: TMD5N50 , TMD5N50G , TMD5N60AZ , TMD5N60Z , AOD434 , TMD630Z , TMD6N65G , TMD6N70 , 7N65 , TMD7N65AZ , TMD7N65Z , TMD830 , TMD830AZ , TMD830Z , TMD8N25Z , TMD8N50Z , TMD8N60AZ .

Keywords - TMD7N60Z MOSFET specs

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