TMP5N50 Datasheet and Replacement
Type Designator: TMP5N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 92.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 61 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.65 Ohm
Package: TO-220
TMP5N50 substitution
TMP5N50 Datasheet (PDF)
tmp5n50 tmpf5n50.pdf

TMP5N50/TMPF5N50TMP5N50G/TMPF5N50GFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP5N50 / TMPF5N50 TO-220 / TO-220F TMP5N50 / TMPF5N50 RoHST
tmp5n50sg tmpf5n50sg.pdf

TMP5N50SG/TMPF5N50SGVDSS = 550 V @TjmaxFeaturesID = 4A Low gate chargeRDS(ON) = 1.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP5N50SG / TMPF5N50SG TO-220 / TO-220F TMP5N50SG / TMPF5N50SG Halogen FreeAbs
tmp5n60az tmpf5n60az.pdf

TMP5N60AZ(G)/TMPF5N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A
tmp5n60z tmpf5n60z.pdf

TMP5N60Z(G)/TMPF5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 4.2A
Datasheet: TMP3N90 , TMP4N60 , TMP4N60AZ , TMP4N65 , TMP4N65AZ , TMP4N65Z , TMP4N80 , TMP4N90 , SKD502T , TMP5N50SG , TMP5N60AZ , TMP5N60Z , TMP630Z , TMP6N65 , TMP6N70 , TMP7N60Z , TMP7N65AZ .
History: SIHF5N50D | IRF100B201 | H5N5005PL-E0-E
Keywords - TMP5N50 MOSFET datasheet
TMP5N50 cross reference
TMP5N50 equivalent finder
TMP5N50 lookup
TMP5N50 substitution
TMP5N50 replacement
History: SIHF5N50D | IRF100B201 | H5N5005PL-E0-E



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