TMP9N60 MOSFET. Datasheet pdf. Equivalent

   Type Designator: TMP9N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 158 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27 nC
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220

TMP9N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TMP9N60 Datasheet (PDF)

..1. Size:347K trinnotech
tmp9n60 tmpf9n60.pdf

TMP9N60/TMPF9N60TMP9N60G/TMPF9N60GVDSS = 660 V @TjmaxFeaturesID = 9A Low gate chargeRDS(ON) = 1.0 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP9N60 / TMPF9N60 TO-220 / TO-220F TMP9N60 / TMPF9N60 RoHSTMP9

9.1. Size:403K trinnotech
tmp9n90 tmpf9n90.pdf

TMP9N90/TMPF9N90 TMP9N90G/TMPF9N90G VDSS = 990 V @Tjmax Features ID = 9A Low gate charge RDS(ON) = 1.4 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP9N90 / TMPF9N90 TO-220 / TO-220F TMP9N90 / TMPF9N90 RoHS TMP9N90G / TMPF9N

9.2. Size:333K trinnotech
tmp9n50 tmpf9n50.pdf

TMP9N50/TMPF9N50TMP9N50G/TMPF9N50GVDSS = 550 V @TjmaxFeaturesID = 9A Low gate chargeRDS(on) = 0.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP9N50 / TMPF9N50 TO-220 / TO-220F TMP9N50 / TMPF9N50 RoHSTMP9N50G / TMPF9N50G TO-220 / T

9.3. Size:609K trinnotech
tmp9n70 tmpf9n70.pdf