FP20W60C3 PDF Specs and Replacement
Type Designator: FP20W60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 780 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: ITO-3P
FP20W60C3 substitution
FP20W60C3 PDF Specs
fp20w60c3.pdf
P we MOS E o r F T O T IE U LN Untmm i P cae T 3 akg IO-P F 2W6C P 0 0 3 6 0 0 0 V2A 0000 P20W60C3 F aue etr L wR o ON FsS t at wihn cig Ioae akg sltdP cae... See More ⇒
2sk2197 fp20w50vx2.pdf
SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2197 Case E-pack Case ITO-3P (Unit mm) (FP20W50VX2) 500V 20A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High vo... See More ⇒
Detailed specifications: FMW47N60S1HF , FMW79N60S1HF , FP10W50C , FP10W50VX2 , FP10W90 , FP10W90HVX2 , FP11W60C3 , FP20W50VX2 , IRF1407 , FP3W90 , FP5W90HVX2 , FP7W90HVX2 , FP8V50 , FQA10N60C , FQA10N80 , FQA10N80C , FQA11N90 .
History: FXN32N55T
Keywords - FP20W60C3 MOSFET specs
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