FP5W90HVX2 Datasheet. Specs and Replacement

Type Designator: FP5W90HVX2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: ITO-3P

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FP5W90HVX2 datasheet

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 2sk2673 fp5w90hvx2.pdf pdf_icon

FP5W90HVX2

SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2673 Case ITO-3P (Unit mm) ( FP5W90HVX2 ) 900V 5A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of A... See More ⇒

Detailed specifications: FP10W50C, FP10W50VX2, FP10W90, FP10W90HVX2, FP11W60C3, FP20W50VX2, FP20W60C3, FP3W90, IRF2807, FP7W90HVX2, FP8V50, FQA10N60C, FQA10N80, FQA10N80C, FQA11N90, FQA11N90C, FQA12N60

Keywords - FP5W90HVX2 MOSFET specs

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