FP5W90HVX2 Datasheet and Replacement
Type Designator: FP5W90HVX2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: ITO-3P
FP5W90HVX2 substitution
FP5W90HVX2 Datasheet (PDF)
2sk2673 fp5w90hvx2.pdf

SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2673Case : ITO-3P(Unit : mm)( FP5W90HVX2 )900V 5AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.Avalanche resistance guaranteed.APPLICATIONSwitching power supply of A
Datasheet: FP10W50C , FP10W50VX2 , FP10W90 , FP10W90HVX2 , FP11W60C3 , FP20W50VX2 , FP20W60C3 , FP3W90 , 75N75 , FP7W90HVX2 , FP8V50 , FQA10N60C , FQA10N80 , FQA10N80C , FQA11N90 , FQA11N90C , FQA12N60 .
History: STD11NM60N | IPF039N03LG | FP20W60C3 | FMV13N60E | FMV17N60ES | FP20W50VX2 | 2N6659X
Keywords - FP5W90HVX2 MOSFET datasheet
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History: STD11NM60N | IPF039N03LG | FP20W60C3 | FMV13N60E | FMV17N60ES | FP20W50VX2 | 2N6659X
 
 
 
 
 
 
 
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