FP7W90HVX2 MOSFET. Datasheet pdf. Equivalent

   Type Designator: FP7W90HVX2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 63 nC
   tonⓘ - Turn-on Time: 95 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: ITO-3P

FP7W90HVX2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS