FQA22P10 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQA22P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 24 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 40 nC
Rise Time (tr): 170 nS
Drain-Source Capacitance (Cd): 460 pF
Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm
Package: TO-3PN
FQA22P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQA22P10 Datasheet (PDF)
1.1. fqa22p10.pdf 
Size:659K _upd-mosfet
TM QFET FQA22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -24A, -100V, RDS(on) = 0.125Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 160 pF) This advanced technology has been especially tailored to •
Datasheet: FQA13N80 , FQA14N30 , FQA16N25C , FQA16N50 , FQA17N40 , FQA17P10 , FQA19N20L , FQA20N40 , 2SK163 , FQA24N50_F109 , FQA24N50F , FQA28N15_F109 , FQA28N50_F109 , FQA28N50F , FQA33N10 , FQA33N10L , FQA34N20 .
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