FQA22P10 PDF Specs and Replacement
Type Designator: FQA22P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 460 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO-3PN
FQA22P10 substitution
FQA22P10 PDF Specs
fqa22p10.pdf
TM QFET FQA22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -24A, -100V, RDS(on) = 0.125 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 160 pF) This advanced technology has been especially tailored to ... See More ⇒
Detailed specifications: FQA13N80 , FQA14N30 , FQA16N25C , FQA16N50 , FQA17N40 , FQA17P10 , FQA19N20L , FQA20N40 , IRFZ48N , FQA24N50F109 , FQA24N50F , FQA28N15F109 , FQA28N50F109 , FQA28N50F , FQA33N10 , FQA33N10L , FQA34N20 .
Keywords - FQA22P10 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
