FQA22P10 Datasheet. Specs and Replacement

Type Designator: FQA22P10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO-3PN

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FQA22P10 datasheet

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FQA22P10

TM QFET FQA22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -24A, -100V, RDS(on) = 0.125 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 160 pF) This advanced technology has been especially tailored to ... See More ⇒

Detailed specifications: FQA13N80, FQA14N30, FQA16N25C, FQA16N50, FQA17N40, FQA17P10, FQA19N20L, FQA20N40, IRFZ24N, FQA24N50F109, FQA24N50F, FQA28N15F109, FQA28N50F109, FQA28N50F, FQA33N10, FQA33N10L, FQA34N20

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