All MOSFET. FQA22P10 Datasheet

 

FQA22P10 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQA22P10

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 24 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 40 nC

Rise Time (tr): 170 nS

Drain-Source Capacitance (Cd): 460 pF

Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm

Package: TO-3PN

FQA22P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA22P10 Datasheet (PDF)

1.1. fqa22p10.pdf Size:659K _upd-mosfet

FQA22P10 FQA22P10

TM QFET FQA22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -24A, -100V, RDS(on) = 0.125Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 160 pF) This advanced technology has been especially tailored to •

Datasheet: FQA13N80 , FQA14N30 , FQA16N25C , FQA16N50 , FQA17N40 , FQA17P10 , FQA19N20L , FQA20N40 , 2SK163 , FQA24N50_F109 , FQA24N50F , FQA28N15_F109 , FQA28N50_F109 , FQA28N50F , FQA33N10 , FQA33N10L , FQA34N20 .

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