FQA33N10 Datasheet. Specs and Replacement

Type Designator: FQA33N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 163 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 195 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: TO-3P

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FQA33N10 datasheet

 ..1. Size:566K  fairchild semi
 fqa33n10.pdf pdf_icon

FQA33N10

April 2000 TM QFET QFET QFET QFET FQA33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 36A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 62 pF) This advanced technology has been e... See More ⇒

 0.1. Size:644K  fairchild semi
 fqa33n10l.pdf pdf_icon

FQA33N10

September 2000 TM QFET QFET QFET QFET FQA33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 36A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology... See More ⇒

Detailed specifications: FQA19N20L, FQA20N40, FQA22P10, FQA24N50F109, FQA24N50F, FQA28N15F109, FQA28N50F109, FQA28N50F, IRF520, FQA33N10L, FQA34N20, FQA34N20L, FQA34N25, FQA35N40, FQA36P15F109, FQA44N08, FQA44N10

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