FQA33N10 MOSFET PDF: N-Ch, 100V, 36A. Full specification with pinout and replacement list

FQA33N10 PDF Specs and Replacement

   Type Designator: FQA33N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 163 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 195 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO-3P

FQA33N10 substitution

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FQA33N10 PDF Specs

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April 2000 TM QFET QFET QFET QFET FQA33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 36A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 62 pF) This advanced technology has been e... See More ⇒

0.1. Size:644K fairchild semi
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September 2000 TM QFET QFET QFET QFET FQA33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 36A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology... See More ⇒

Detailed specifications: FQA19N20L , FQA20N40 , FQA22P10 , FQA24N50F109 , FQA24N50F , FQA28N15F109 , FQA28N50F109 , FQA28N50F , AON7403 , FQA33N10L , FQA34N20 , FQA34N20L , FQA34N25 , FQA35N40 , FQA36P15F109 , FQA44N08 , FQA44N10 .