All MOSFET. FQA55N10 Datasheet

 

FQA55N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQA55N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 61 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 75 nC

Rise Time (tr): 250 nS

Drain-Source Capacitance (Cd): 640 pF

Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm

Package: TO-3P

FQA55N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA55N10 Datasheet (PDF)

1.1. fqa55n10.pdf Size:661K _fairchild_semi

FQA55N10 FQA55N10

August 2000 TM QFET QFET QFET QFET FQA55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 61A, 100V, RDS(on) = 0.026Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 75 nC) planar stripe, DMOS technology. • Low Crss ( typical 130 pF) This advanced technology has been

4.1. fqa55n25.pdf Size:863K _fairchild_semi

FQA55N10 FQA55N10

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 55A, 250V, RDS(on) = 0.04? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 140 nC) planar stripe, DMOS technology. Low Crss ( typical 125 pF) This advanced technology has been especially tai

 

Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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