FQA55N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQA55N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 61 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 75 nC
Rise Time (tr): 250 nS
Drain-Source Capacitance (Cd): 640 pF
Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm
Package: TO-3P
FQA55N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQA55N10 Datasheet (PDF)
1.1. fqa55n10.pdf 
Size:661K _fairchild_semi
August 2000 TM QFET QFET QFET QFET FQA55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 61A, 100V, RDS(on) = 0.026Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 75 nC) planar stripe, DMOS technology. • Low Crss ( typical 130 pF) This advanced technology has been
4.1. fqa55n25.pdf Size:863K _fairchild_semi
May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 55A, 250V, RDS(on) = 0.04? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 140 nC) planar stripe, DMOS technology. Low Crss ( typical 125 pF) This advanced technology has been especially tai
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