FQA55N10 Datasheet and Replacement
Type Designator: FQA55N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 61 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 75 nC
tr ⓘ - Rise Time: 250 nS
Cossⓘ - Output Capacitance: 640 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: TO-3P
FQA55N10 Datasheet (PDF)
fqa55n10.pdf
August 2000TMQFETQFETQFETQFETFQA55N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 61A, 100V, RDS(on) = 0.026 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 130 pF)This advanced technology has been
fqa55n25.pdf
May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 55A, 250V, RDS(on) = 0.04 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 140 nC)planar stripe, DMOS technology. Low Crss ( typical 125 pF)This advanced technology has been e
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Keywords - FQA55N10 MOSFET datasheet
FQA55N10 cross reference
FQA55N10 equivalent finder
FQA55N10 lookup
FQA55N10 substitution
FQA55N10 replacement
