FQA55N10 Specs and Replacement
Type Designator: FQA55N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 61 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 250 nS
Cossⓘ - Output Capacitance: 640 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: TO-3P
FQA55N10 substitution
FQA55N10 Specs
fqa55n10.pdf
August 2000 TM QFET QFET QFET QFET FQA55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 61A, 100V, RDS(on) = 0.026 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 130 pF) This advanced technology has been... See More ⇒
fqa55n25.pdf
May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 55A, 250V, RDS(on) = 0.04 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 140 nC) planar stripe, DMOS technology. Low Crss ( typical 125 pF) This advanced technology has been e... See More ⇒
Detailed specifications: FQA34N25 , FQA35N40 , FQA36P15F109 , FQA44N08 , FQA44N10 , FQA46N15F109 , FQA47P06 , FQA48N20 , IRF3205 , FQA5N90 , FQA65N06 , FQA6N70 , FQA6N80 , FQA6N90 , FQA7N60 , FQA7N80 , FQA7N80C .
History: 2N5452
Keywords - FQA55N10 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2N5452
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