All MOSFET. FQA55N10 Datasheet

 

FQA55N10 Datasheet and Replacement


   Type Designator: FQA55N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 61 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO-3P
 

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FQA55N10 Datasheet (PDF)

 ..1. Size:661K  fairchild semi
 fqa55n10.pdf pdf_icon

FQA55N10

August 2000TMQFETQFETQFETQFETFQA55N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 61A, 100V, RDS(on) = 0.026 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 130 pF)This advanced technology has been

 8.1. Size:863K  fairchild semi
 fqa55n25.pdf pdf_icon

FQA55N10

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 55A, 250V, RDS(on) = 0.04 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 140 nC)planar stripe, DMOS technology. Low Crss ( typical 125 pF)This advanced technology has been e

Datasheet: FQA34N25 , FQA35N40 , FQA36P15F109 , FQA44N08 , FQA44N10 , FQA46N15F109 , FQA47P06 , FQA48N20 , IRF3205 , FQA5N90 , FQA65N06 , FQA6N70 , FQA6N80 , FQA6N90 , FQA7N60 , FQA7N80 , FQA7N80C .

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