FQB85N06TM_AM002 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQB85N06TM_AM002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 85 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 86 nC
Rise Time (tr): 230 nS
Drain-Source Capacitance (Cd): 1150 pF
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: D2-PAK
FQB85N06TM_AM002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQB85N06TM_AM002 Datasheet (PDF)
1.1. fqb85n06tm am002.pdf 
Size:655K _fairchild_semi
May 2001 TM QFET FQB85N06 / FQI85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 85A, 60V, RDS(on) = 0.010Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 86 nC) planar stripe, DMOS technology. • Low Crss ( typically 165 pF) This advanced technology has been especia
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
