FQB85N06TMAM002 MOSFET Datasheet: N-Ch, 60V, 85A. Full specification with pinout and replacement list

FQB85N06TMAM002 Specs and Replacement

   Type Designator: FQB85N06TMAM002
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   Qg ⓘ - Total Gate Charge: 86 nC
   tr ⓘ - Rise Time: 230 nS
   Cossⓘ - Output Capacitance: 1150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: D2-PAK

FQB85N06TMAM002 substitution

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FQB85N06TMAM002 datasheet

4.1. Size:655K fairchild semi
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May 2001 TM QFET FQB85N06 / FQI85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 85A, 60V, RDS(on) = 0.010 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typically 86 nC) planar stripe, DMOS technology. Low Crss ( typically 165 pF) This advanced technology has been especia... See More ⇒

Detailed specifications: FQB70N10TMAM002 , FQB7N10LTM , FQB7N20LTM , FQB7N30TM , FQB7N60TM , FQB7N65CTM , FQB7N80TMAM002 , FQB7P06TM , IRF1407 , FQB8N25TM , FQB8N60CFTM , FQB8P10TM , FQB9N08LTM , FQB9N08TM , FQB9N15TM , FQB9N25CTM , FQB9N25TM .