FQB85N06TMAM002 Datasheet. Specs and Replacement

Type Designator: FQB85N06TMAM002  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 230 nS

Cossⓘ - Output Capacitance: 1150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: D2-PAK

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FQB85N06TMAM002 datasheet

 4.1. Size:655K  fairchild semi
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FQB85N06TMAM002

May 2001 TM QFET FQB85N06 / FQI85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 85A, 60V, RDS(on) = 0.010 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typically 86 nC) planar stripe, DMOS technology. Low Crss ( typically 165 pF) This advanced technology has been especia... See More ⇒

Detailed specifications: FQB70N10TMAM002, FQB7N10LTM, FQB7N20LTM, FQB7N30TM, FQB7N60TM, FQB7N65CTM, FQB7N80TMAM002, FQB7P06TM, 10N65, FQB8N25TM, FQB8N60CFTM, FQB8P10TM, FQB9N08LTM, FQB9N08TM, FQB9N15TM, FQB9N25CTM, FQB9N25TM

Keywords - FQB85N06TMAM002 MOSFET specs

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