FQB85N06TMAM002 Datasheet and Replacement
Type Designator: FQB85N06TMAM002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 230 nS
Cossⓘ - Output Capacitance: 1150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: D2-PAK
FQB85N06TMAM002 substitution
FQB85N06TMAM002 Datasheet (PDF)
fqb85n06tm am002.pdf

May 2001TMQFETFQB85N06 / FQI85N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 85A, 60V, RDS(on) = 0.010 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 86 nC)planar stripe, DMOS technology. Low Crss ( typically 165 pF)This advanced technology has been especia
Datasheet: FQB70N10TMAM002 , FQB7N10LTM , FQB7N20LTM , FQB7N30TM , FQB7N60TM , FQB7N65CTM , FQB7N80TMAM002 , FQB7P06TM , P0903BDG , FQB8N25TM , FQB8N60CFTM , FQB8P10TM , FQB9N08LTM , FQB9N08TM , FQB9N15TM , FQB9N25CTM , FQB9N25TM .
History: IXTV26N50PS
Keywords - FQB85N06TMAM002 MOSFET datasheet
FQB85N06TMAM002 cross reference
FQB85N06TMAM002 equivalent finder
FQB85N06TMAM002 lookup
FQB85N06TMAM002 substitution
FQB85N06TMAM002 replacement
History: IXTV26N50PS



LIST
Last Update
MOSFET: JMSL0604AGQ | JMSL0604AG | JMSL0603PG | JMSL0603BGQ | JMSL0603BG | JMSL0603AK | JMSL0602PG | JMSL0602MG | JMSL0602AGQ | JMSL0602AG | JMSL0601TG | JMSL0601BGQ | JMSL0601BG | JMSL0601AGQ | JMSL0601AG | JMTP330N06D
Popular searches
2n5401 transistor equivalent | p0903bdg | c1384 transistor | 2sc1175 | 2sc632 | mje15030 transistor equivalent | 13003b | 2n6121