All MOSFET. FQB85N06TM_AM002 Datasheet

 

FQB85N06TM_AM002 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQB85N06TM_AM002

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 85 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 86 nC

Rise Time (tr): 230 nS

Drain-Source Capacitance (Cd): 1150 pF

Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm

Package: D2-PAK

FQB85N06TM_AM002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB85N06TM_AM002 Datasheet (PDF)

1.1. fqb85n06tm am002.pdf Size:655K _fairchild_semi

FQB85N06TM_AM002 FQB85N06TM_AM002

May 2001 TM QFET FQB85N06 / FQI85N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 85A, 60V, RDS(on) = 0.010Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 86 nC) planar stripe, DMOS technology. • Low Crss ( typically 165 pF) This advanced technology has been especia

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
Back to Top