All MOSFET. FQB85N06TMAM002 Datasheet

 

FQB85N06TMAM002 Datasheet and Replacement


   Type Designator: FQB85N06TMAM002
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 86 nC
   tr ⓘ - Rise Time: 230 nS
   Cossⓘ - Output Capacitance: 1150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: D2-PAK
 

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FQB85N06TMAM002 Datasheet (PDF)

 4.1. Size:655K  fairchild semi
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FQB85N06TMAM002

May 2001TMQFETFQB85N06 / FQI85N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 85A, 60V, RDS(on) = 0.010 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 86 nC)planar stripe, DMOS technology. Low Crss ( typically 165 pF)This advanced technology has been especia

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History: IRFS4710PBF

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