FQD630TM MOSFET. Datasheet pdf. Equivalent
Type Designator: FQD630TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 46 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 19 nC
Rise Time (tr): 75 nS
Drain-Source Capacitance (Cd): 85 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: D-PAK
FQD630TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQD630TM Datasheet (PDF)
0.1. fqd630tf fqd630tm.pdf 
Size:853K _fairchild_semi
April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 7A, 200V, RDS(on) = 0.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has b
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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