FQD630TM Datasheet and Replacement
Type Designator: FQD630TM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: D-PAK
FQD630TM substitution
FQD630TM Datasheet (PDF)
fqd630tf fqd630tm.pdf

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has b
Datasheet: FQD5N50TF , FQD5N60CTF , FQD5N60CTM , FQD5P10TF , FQD5P10TM , FQD5P20TF , FQD5P20TM , FQD630TF , NCEP15T14 , FQD6N25TF , FQD6N25TM , FQD6N40CTF , FQD6N40CTM , FQD6N40TF , FQD6N40TM , IRF2204LPBF , IRF2204PBF .
History: AP03N70I-HF | PMV160UP | 2N7002DSGP | GP1M005A050XXX
Keywords - FQD630TM MOSFET datasheet
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History: AP03N70I-HF | PMV160UP | 2N7002DSGP | GP1M005A050XXX



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