All MOSFET. FQD630TM Datasheet

 

FQD630TM Datasheet and Replacement


   Type Designator: FQD630TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: D-PAK
 

 FQD630TM substitution

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FQD630TM Datasheet (PDF)

 ..1. Size:853K  fairchild semi
 fqd630tf fqd630tm.pdf pdf_icon

FQD630TM

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has b

Datasheet: FQD5N50TF , FQD5N60CTF , FQD5N60CTM , FQD5P10TF , FQD5P10TM , FQD5P20TF , FQD5P20TM , FQD630TF , IRF9640 , FQD6N25TF , FQD6N25TM , FQD6N40CTF , FQD6N40CTM , FQD6N40TF , FQD6N40TM , IRF2204LPBF , IRF2204PBF .

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