FQD630TM Datasheet. Specs and Replacement

Type Designator: FQD630TM  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: D-PAK

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FQD630TM substitution

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FQD630TM datasheet

 ..1. Size:853K  fairchild semi
 fqd630tf fqd630tm.pdf pdf_icon

FQD630TM

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has b... See More ⇒

Detailed specifications: FQD5N50TF, FQD5N60CTF, FQD5N60CTM, FQD5P10TF, FQD5P10TM, FQD5P20TF, FQD5P20TM, FQD630TF, IRL3713, FQD6N25TF, FQD6N25TM, FQD6N40CTF, FQD6N40CTM, FQD6N40TF, FQD6N40TM, IRF2204LPBF, IRF2204PBF

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