All MOSFET. FQD8N25TF Datasheet

 

FQD8N25TF MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD8N25TF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 6.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 12 nC

Rise Time (tr): 95 nS

Drain-Source Capacitance (Cd): 85 pF

Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm

Package: D-PAK

FQD8N25TF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD8N25TF Datasheet (PDF)

0.1. fqd8n25tf fqu8n25tu.pdf Size:603K _fairchild_semi

FQD8N25TF
FQD8N25TF

May 2000 TM QFET QFET QFET QFET FQD8N25 / FQU8N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6.2A, 250V, RDS(on) = 0.55Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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