FQD8N25TF Datasheet and Replacement
Type Designator: FQD8N25TF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: D-PAK
FQD8N25TF substitution
FQD8N25TF Datasheet (PDF)
fqd8n25tf fqu8n25tu.pdf

May 2000TMQFETQFETQFETQFETFQD8N25 / FQU8N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.2A, 250V, RDS(on) = 0.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has
Datasheet: FQD7N20TF , FQD7N20TM , FQD7N30TF , FQD7N30TM , FQD7P06TF , FQD7P06TM , FQD7P20TF , FQD7P20TM , AO3407 , FQD8P10TF , FQD8P10TM , FQD9N25TF , FQD9N25TM , FQE10N20CTU , FQH140N10 , FQH18N50V2 , FQH44N10F133 .
History: SISA10DN
Keywords - FQD8N25TF MOSFET datasheet
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History: SISA10DN



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