All MOSFET. FQI16N25CTU Datasheet

 

FQI16N25CTU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI16N25CTU

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 139 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 15.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 41 nC

Rise Time (tr): 130 nS

Drain-Source Capacitance (Cd): 170 pF

Maximum Drain-Source On-State Resistance (Rds): 0.27 Ohm

Package: I2-PAK

FQI16N25CTU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI16N25CTU Datasheet (PDF)

1.1. fqi16n25ctu.pdf Size:761K _fairchild_semi

FQI16N25CTU
FQI16N25CTU

June 2006 ® QFET FQB16N25C/FQI16N25C 250V N-Channel MOSFET Features Description • 15.6A, 250V, RDS(on) = 0.27 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 41nC) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typica

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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