FQI16N25CTU Datasheet. Specs and Replacement

Type Designator: FQI16N25CTU  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: I2-PAK

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FQI16N25CTU datasheet

 ..1. Size:761K  fairchild semi
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FQI16N25CTU

June 2006 QFET FQB16N25C/FQI16N25C 250V N-Channel MOSFET Features Description 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 41nC) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typica... See More ⇒

Detailed specifications: FQI11P06TU, FQI12N50TU, FQI12N60CTU, FQI12N60TU, FQI13N06LTU, FQI13N06TU, FQI13N50CTU, FQI15P12TU, 2N7002, FQI17N08LTU, FQI17N08TU, FQI17P06TU, FQI19N20CTU, FQI19N20TU, FQI1P50TU, FQI27N25TU, FQI27P06TU

Keywords - FQI16N25CTU MOSFET specs

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