FQI16N25CTU PDF Specs and Replacement
Type Designator: FQI16N25CTU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: I2-PAK
FQI16N25CTU substitution
FQI16N25CTU PDF Specs
fqb16n25ctm fqi16n25ctu.pdf
June 2006 QFET FQB16N25C/FQI16N25C 250V N-Channel MOSFET Features Description 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 41nC) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typica... See More ⇒
Detailed specifications: FQI11P06TU , FQI12N50TU , FQI12N60CTU , FQI12N60TU , FQI13N06LTU , FQI13N06TU , FQI13N50CTU , FQI15P12TU , IRFB4110 , FQI17N08LTU , FQI17N08TU , FQI17P06TU , FQI19N20CTU , FQI19N20TU , FQI1P50TU , FQI27N25TU , FQI27P06TU .
Keywords - FQI16N25CTU MOSFET specs
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