All MOSFET. FQI16N25CTU Datasheet

 

FQI16N25CTU Datasheet and Replacement


   Type Designator: FQI16N25CTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: I2-PAK
 

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FQI16N25CTU Datasheet (PDF)

 ..1. Size:761K  fairchild semi
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FQI16N25CTU

June 2006 QFETFQB16N25C/FQI16N25C250V N-Channel MOSFETFeatures Description 15.6A, 250V, RDS(on) = 0.27 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 41nC)stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typica

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