All MOSFET. FQI47P06TU Datasheet

 

FQI47P06TU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI47P06TU

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 47 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 84 nC

Rise Time (tr): 450 nS

Drain-Source Capacitance (Cd): 1300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm

Package: I2-PAK

FQI47P06TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI47P06TU Datasheet (PDF)

1.1. fqi47p06tu.pdf Size:1192K _fairchild_semi

FQI47P06TU
FQI47P06TU

October 2008 QFET® FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -47A, -60V, RDS(on) = 0.026Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 84 nC) planar stripe, DMOS technology. • Low Crss ( typical 320 pF) This advanced technology has been especi

2.1. fqb47p06 fqi47p06.pdf Size:1207K _fairchild_semi

FQI47P06TU
FQI47P06TU

October 2008 QFET FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especially tailored

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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