All MOSFET. FQI47P06TU Datasheet

 

FQI47P06TU Datasheet and Replacement


   Type Designator: FQI47P06TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 450 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: I2-PAK
 

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FQI47P06TU Datasheet (PDF)

 ..1. Size:1192K  fairchild semi
 fqb47p06tm am002 fqi47p06tu.pdf pdf_icon

FQI47P06TU

October 2008QFETFQB47P06 / FQI47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especi

 6.1. Size:1207K  fairchild semi
 fqb47p06 fqi47p06.pdf pdf_icon

FQI47P06TU

October 2008QFETFQB47P06 / FQI47P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 320 pF)This advanced technology has been especi

Datasheet: FQI2P25TU , FQI34P10TU , FQI3N25TU , FQI3N30TU , FQI3N40TU , FQI3N90TU , FQI3P20TU , FQI3P50TU , IRF1010E , FQI4N20TU , FQI4N25TU , FQI4N90TU , FQI4P40TU , FQI50N06LTU , FQI50N06TU , FQI5N15TU , FQI5N20LTU .

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