FQI47P06TU Datasheet. Specs and Replacement

Type Designator: FQI47P06TU  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 450 nS

Cossⓘ - Output Capacitance: 1300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: I2-PAK

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FQI47P06TU datasheet

 ..1. Size:1192K  fairchild semi
 fqb47p06tm am002 fqi47p06tu.pdf pdf_icon

FQI47P06TU

October 2008 QFET FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especi... See More ⇒

 6.1. Size:1207K  fairchild semi
 fqb47p06 fqi47p06.pdf pdf_icon

FQI47P06TU

October 2008 QFET FQB47P06 / FQI47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -47A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especi... See More ⇒

Detailed specifications: FQI2P25TU, FQI34P10TU, FQI3N25TU, FQI3N30TU, FQI3N40TU, FQI3N90TU, FQI3P20TU, FQI3P50TU, IRF1010E, FQI4N20TU, FQI4N25TU, FQI4N90TU, FQI4P40TU, FQI50N06LTU, FQI50N06TU, FQI5N15TU, FQI5N20LTU

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