All MOSFET. FQP22P10 Datasheet

 

FQP22P10 Datasheet and Replacement


   Type Designator: FQP22P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO-220
 

 FQP22P10 substitution

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FQP22P10 Datasheet (PDF)

 ..1. Size:646K  fairchild semi
 fqp22p10.pdf pdf_icon

FQP22P10

TMQFETFQP22P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -22A, -100V, RDS(on) = 0.125 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 160 pF)This advanced technology has been especially tailored to

 9.1. Size:757K  fairchild semi
 fqp22n30.pdf pdf_icon

FQP22P10

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 21A, 300V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar stripe, DMOS technology. Low Crss ( typical 40 pF)This advanced technology has been esp

 9.2. Size:1466K  onsemi
 fqp22n30.pdf pdf_icon

FQP22P10

Datasheet: FQP19N10 , FQP19N10L , FQP19N20CTSTU , FQP19N20L , FQP1N50 , FQP1N60 , FQP1P50 , FQP20N06TSTU , BS170 , FQP27P06SW82127 , FQP2N30 , FQP2N50 , FQP2N60 , FQP2NA90 , FQP2P25 , FQP32N12V2 , FQP33N10L .

History: HTD350C04 | STLT20 | NP83P04PDG | IXFR18N90P | STD85N3LH5 | PE6D2DX | IXFR180N15P

Keywords - FQP22P10 MOSFET datasheet

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