FQP22P10 Datasheet. Specs and Replacement

Type Designator: FQP22P10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO-220

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FQP22P10 substitution

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FQP22P10 datasheet

 ..1. Size:646K  fairchild semi
 fqp22p10.pdf pdf_icon

FQP22P10

TM QFET FQP22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -22A, -100V, RDS(on) = 0.125 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 160 pF) This advanced technology has been especially tailored to ... See More ⇒

 9.1. Size:757K  fairchild semi
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FQP22P10

May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 21A, 300V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 47 nC) planar stripe, DMOS technology. Low Crss ( typical 40 pF) This advanced technology has been esp... See More ⇒

 9.2. Size:1466K  onsemi
 fqp22n30.pdf pdf_icon

FQP22P10

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Detailed specifications: FQP19N10, FQP19N10L, FQP19N20CTSTU, FQP19N20L, FQP1N50, FQP1N60, FQP1P50, FQP20N06TSTU, IRF830, FQP27P06SW82127, FQP2N30, FQP2N50, FQP2N60, FQP2NA90, FQP2P25, FQP32N12V2, FQP33N10L

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.