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FQP22P10 Spec and Replacement


   Type Designator: FQP22P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO-220

 FQP22P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP22P10 Specs

 ..1. Size:646K  fairchild semi
 fqp22p10.pdf pdf_icon

FQP22P10

TM QFET FQP22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -22A, -100V, RDS(on) = 0.125 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 160 pF) This advanced technology has been especially tailored to ... See More ⇒

 9.1. Size:757K  fairchild semi
 fqp22n30.pdf pdf_icon

FQP22P10

May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 21A, 300V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 47 nC) planar stripe, DMOS technology. Low Crss ( typical 40 pF) This advanced technology has been esp... See More ⇒

 9.2. Size:1466K  onsemi
 fqp22n30.pdf pdf_icon

FQP22P10

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Detailed specifications: FQP19N10 , FQP19N10L , FQP19N20CTSTU , FQP19N20L , FQP1N50 , FQP1N60 , FQP1P50 , FQP20N06TSTU , AO4407A , FQP27P06SW82127 , FQP2N30 , FQP2N50 , FQP2N60 , FQP2NA90 , FQP2P25 , FQP32N12V2 , FQP33N10L .

History: HGB640N25S | HGB070N12S | STP6N50FI | HAF2008

Keywords - FQP22P10 MOSFET specs

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