All MOSFET. SHD619532 Datasheet

 

SHD619532 MOSFET. Datasheet pdf. Equivalent

Type Designator: SHD619532

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 1200 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 23 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Package: LCC-3P

SHD619532 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SHD619532 Datasheet (PDF)

1.1. shd619532.pdf Size:159K _upd-mosfet

SHD619532
SHD619532

SENSITRON ______ SHD619532 SEMICONDUCTOR DATASHEET 5313, REV - 1200V, 23A Silicon Carbide Power MOSFET  Through-hole hermetic package  Low Rdson over full temperature range  Low switching losses  Very low capacitances  JANTX / JANS screening options available Maximum Ratings PARAMETER SYMBOL VALUE UNIT Continuous Drain Current Vgs = 20V, Tc=250C Id 23 A

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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