All MOSFET. SHD619532 Datasheet

 

SHD619532 MOSFET. Datasheet pdf. Equivalent

Type Designator: SHD619532

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 1200 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 23 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Package: LCC-3P

SHD619532 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SHD619532 Datasheet (PDF)

1.1. shd619532.pdf Size:159K _upd-mosfet

SHD619532
SHD619532

SENSITRON ______ SHD619532 SEMICONDUCTOR DATASHEET 5313, REV - 1200V, 23A Silicon Carbide Power MOSFET  Through-hole hermetic package  Low Rdson over full temperature range  Low switching losses  Very low capacitances  JANTX / JANS screening options available Maximum Ratings PARAMETER SYMBOL VALUE UNIT Continuous Drain Current Vgs = 20V, Tc=250C Id 23 A

Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 
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