SHD619532 Datasheet. Specs and Replacement

Type Designator: SHD619532  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: LCC-3P

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SHD619532 datasheet

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SHD619532

SENSITRON ______ SHD619532 SEMICONDUCTOR DATASHEET 5313, REV - 1200V, 23A Silicon Carbide Power MOSFET Through-hole hermetic package Low Rdson over full temperature range Low switching losses Very low capacitances JANTX / JANS screening options available Maximum Ratings PARAMETER SYMBOL VALUE UNIT Continuous Drain Current Vgs = 20V, Tc=250C Id 23 A ... See More ⇒

Detailed specifications: SHD239603, SHD239604, SHD239606, SHD239607, SHD239608, SHD246723, SHD280502, SHD280504, 10N60, SHD626532, SHDC220212, SHDC220213, SHDC220301, IRF7353D1PBF, IRF7353D2PBF, IRF7379IPBF, IRF7379QPBF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.