SHD626532 Specs and Replacement
Type Designator: SHD626532
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO-257
SHD626532 substitution
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SHD626532 datasheet
shd626532.pdf
SENSITRON ______ SHD626532 SEMICONDUCTOR DATASHEET 5312, REV - 1200V, 20A Silicon Carbide Power MOSFET Through-hole hermetic package Low Rdson over full temperature range Low switching losses Very low capacitance JANTX / JANS screening options available Maximum Ratings PARAMETER SYMBOL VALUE UNIT Continuous Drain Current Vgs = 20V, Tc=250C Id 20 A 1... See More ⇒
Detailed specifications: SHD239604 , SHD239606 , SHD239607 , SHD239608 , SHD246723 , SHD280502 , SHD280504 , SHD619532 , IRFB4115 , SHDC220212 , SHDC220213 , SHDC220301 , IRF7353D1PBF , IRF7353D2PBF , IRF7379IPBF , IRF7379QPBF , IRF737LCPBF .
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