SIE862DF MOSFET. Datasheet pdf. Equivalent

Type Designator: SIE862DF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 5.2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 48 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 610 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0032 Ohm

Package: PolarPAK

SIE862DF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SIE862DF Datasheet (PDF)

1.1. sie862df.pdf Size:204K _upd-mosfet

New Product SiE862DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 ID (A)a Definition • TrenchFET® Gen III Power MOSFET Silicon Package VDS (V) RDS(on) (Ω)e Limit Limit Qg (Typ.) • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for 0.0032 at VGS = 10 V 134 50 Double-Sided Cooling

1.2. sie862df.pdf Size:204K _vishay

5.1. sie864df.pdf Size:131K _upd-mosfet

New Product SiE864DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) Definition 0.0056 at VGS = 10 V 45 • TrenchFET® Gen III Power MOSFET 30 11.9 nC • Ultra Low Thermal Resistance Using Top- 0.0073 at VGS = 4.5 V 45 Exposed PolarPAK® Package for Double- Sided Coo

5.2. sie860df.pdf Size:204K _upd-mosfet

New Product SiE860DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 ID (A) Definition Silicon Package • TrenchFET® Gen III Power MOSFET VDS (V) RDS(on) (Ω)e Limit Limit Qg (Typ.) • Ultra Low Thermal Resistance Using Top- 0.0021 at VGS = 10 V 178 60a Exposed PolarPAK® Package for Double- 30 34 nC Sid

5.3. sie868df.pdf Size:201K _upd-mosfet

New Product SiE868DF Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 ID (A)a Definition Silicon Package • TrenchFET® Gen III Power MOSFET VDS (V) RDS(on) (Ω) Qg (Typ.) Limit Limit • Ultra Low Thermal Resistance Using 0.0023 at VGS = 10 V Top-Exposed PolarPAK® Package for 169 60 40 45 nC Double-Side

5.4. sie864df.pdf Size:131K _vishay