All MOSFET. SIHB6N65E Datasheet

 

SIHB6N65E Datasheet and Replacement


   Type Designator: SIHB6N65E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-263
 

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SIHB6N65E Datasheet (PDF)

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SIHB6N65E

SiHB6N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced switching and conduction lossesQg max. (nC) 48 Ultra low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 11 Mat

Datasheet: SIHB22N60S , SIHB22N65E , SIHB23N60E , SIHB24N65E , SIHB28N60EF , SIHB30N60E , SIHB33N60E , SIHB33N60EF , 2SK3918 , SIHB8N50D , SIHD12N50E , SIHD3N50D , SIHD3N50DA , SIHD5N50D , SIHD6N62E , SIHD6N65E , SIHD7N60E .

History: NDS9952A | SIHB33N60EF

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