SIHB6N65E PDF and Equivalents Search

 

SIHB6N65E Specs and Replacement

Type Designator: SIHB6N65E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 40 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-263

SIHB6N65E substitution

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SIHB6N65E datasheet

 ..1. Size:208K  vishay
 sihb6n65e.pdf pdf_icon

SIHB6N65E

SiHB6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 Reduced switching and conduction losses Qg max. (nC) 48 Ultra low gate charge (Qg) Qgs (nC) 6 Avalanche energy rated (UIS) Qgd (nC) 11 Mat... See More ⇒

Detailed specifications: SIHB22N60S , SIHB22N65E , SIHB23N60E , SIHB24N65E , SIHB28N60EF , SIHB30N60E , SIHB33N60E , SIHB33N60EF , EMB04N03H , SIHB8N50D , SIHD12N50E , SIHD3N50D , SIHD3N50DA , SIHD5N50D , SIHD6N62E , SIHD6N65E , SIHD7N60E .

History: AP120N04D | AP180N08T | AP18N20Y | SIHD7N60E | AP120N02D | IRFR5505TR | SIHF10N40D

Keywords - SIHB6N65E MOSFET specs

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