All MOSFET. SIHD7N60E Datasheet

 

SIHD7N60E MOSFET. Datasheet pdf. Equivalent

Type Designator: SIHD7N60E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 78 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 20 nC

Rise Time (tr): 13 nS

Drain-Source Capacitance (Cd): 39 pF

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO-252

SIHD7N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIHD7N60E Datasheet (PDF)

1.1. sihd7n60e.pdf Size:188K _upd-mosfet

SIHD7N60E
SIHD7N60E

SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.6 • Reduced Switching and Conduction Losses Qg max. (nC) 40 • Ultra Low Gate Charge (Qg) Qgs (nC) 5 • Avalanche Energy Rated (UIS) Qgd (nC) 9 • Mate

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