All MOSFET. SIHD7N60E Datasheet

 

SIHD7N60E Datasheet and Replacement


   Type Designator: SIHD7N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 20 nC
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-252
 

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SIHD7N60E Datasheet (PDF)

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SIHD7N60E

SiHD7N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced Switching and Conduction LossesQg max. (nC) 40 Ultra Low Gate Charge (Qg)Qgs (nC) 5 Avalanche Energy Rated (UIS)Qgd (nC) 9 Mate

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History: FDC633N | IRF1104PBF

Keywords - SIHD7N60E MOSFET datasheet

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