IRLBL1304 Datasheet and Replacement
Type Designator: IRLBL1304
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 185 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 350 nS
Cossⓘ - Output Capacitance: 2150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: SUPERD2PAK
IRLBL1304 substitution
IRLBL1304 Datasheet (PDF)
irlbl1304.pdf
PD- 91843AIRLBL1304HEXFET Power MOSFET >1mm lower profile than D2PakD Same footprint as D2pakVDSS = 40V Logic Level Gate Surface mountRDS(on) = 0.0045 Ultra Low On-ResistanceG Fully Avalanche RatedID = 185A 50% greater current in typ. applicationScondition vs. D2PakDescriptionThe HEXFET MOSFET is the most popular power MOSFET in the world.This parti
Datasheet: IRL640A , IRL640S , IRL641 , IRLBA1304 , IRLBA1304P , IRLBA3803 , IRLBA3803P , 7N65L-TF3-T , AO3407 , IRLD014 , IRLD024 , IRLD110 , IRLD120 , IRLI2203N , IRLI2505 , IRLI2910 , IRLI3705N .
Keywords - IRLBL1304 MOSFET datasheet
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History: IRFF320 | 2SJ104
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