IRLBL1304 Datasheet and Replacement
Type Designator: IRLBL1304
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1(min) V
|Id| ⓘ - Maximum Drain Current: 185 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 140(max) nC
tr ⓘ - Rise Time: 350 nS
Cossⓘ - Output Capacitance: 2150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: SUPERD2PAK
IRLBL1304 substitution
IRLBL1304 Datasheet (PDF)
irlbl1304.pdf

PD- 91843AIRLBL1304HEXFET Power MOSFET >1mm lower profile than D2PakD Same footprint as D2pakVDSS = 40V Logic Level Gate Surface mountRDS(on) = 0.0045 Ultra Low On-ResistanceG Fully Avalanche RatedID = 185A 50% greater current in typ. applicationScondition vs. D2PakDescriptionThe HEXFET MOSFET is the most popular power MOSFET in the world.This parti
Datasheet: IRL640A , IRL640S , IRL641 , IRLBA1304 , IRLBA1304P , IRLBA3803 , IRLBA3803P , 7N65L-TF3-T , AO3407 , IRLD014 , IRLD024 , IRLD110 , IRLD120 , IRLI2203N , IRLI2505 , IRLI2910 , IRLI3705N .
Keywords - IRLBL1304 MOSFET datasheet
IRLBL1304 cross reference
IRLBL1304 equivalent finder
IRLBL1304 lookup
IRLBL1304 substitution
IRLBL1304 replacement



LIST
Last Update
MOSFET: APG12N10D | AP90N06D | AP8P10S | AP80P01NF | AP80N08NF | AP80N08D | AP70N03DF | AP6G04S | AP50N06DF | AP3404MI | AP130N20MP | AP60N02BD | AP50N06Y | AP50N03S | AP4N06SI | AP3416AI
Popular searches
bc238 | 2sb772 | 2n2222a-1726 datasheet | bc516 | 2n3391 equivalent | a562 transistor | oc44 datasheet | 2sa70