IRF8852PBF Datasheet. Specs and Replacement

Type Designator: IRF8852PBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.9 nS

Cossⓘ - Output Capacitance: 295 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm

Package: TSSOP-8

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IRF8852PBF datasheet

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IRF8852PBF

PD - 96246 IRF8852PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max l Dual N-Channel MOSFET Id l Very Small SOIC Package 11.3m @VGS = 10V 7.8A l Low Profile (... See More ⇒

Detailed specifications: IRF8721GPBF, IRF8721PBF, IRF8721PBF-1, IRF8734PBF, IRF8736PBF, IRF8736PBF-1, IRF8788PBF, IRF8788PBF-1, IRF3205, IRF8910GPBF, IRF8910PBF-1, IRF9130SMD, IRF9130SMD05, IRF9310PBF, IRF9310PBF-1, IRF9317PBF, IRF9321PBF

Keywords - IRF8852PBF MOSFET specs

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