All MOSFET. IRF8852PBF Datasheet

 

IRF8852PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF8852PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35 V
   |Id|ⓘ - Maximum Drain Current: 7.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 10.9 nS
   Cossⓘ - Output Capacitance: 295 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm
   Package: TSSOP-8

 IRF8852PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF8852PBF Datasheet (PDF)

 ..1. Size:296K  international rectifier
 irf8852pbf.pdf

IRF8852PBF IRF8852PBF

PD - 96246IRF8852PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) maxl Dual N-Channel MOSFET Id l Very Small SOIC Package11.3m @VGS = 10V7.8Al Low Profile (

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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