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IRF8852PBF Spec and Replacement


   Type Designator: IRF8852PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.9 nS
   Cossⓘ - Output Capacitance: 295 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm
   Package: TSSOP-8
 

 IRF8852PBF substitution

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IRF8852PBF Specs

 ..1. Size:296K  international rectifier
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IRF8852PBF

PD - 96246 IRF8852PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max l Dual N-Channel MOSFET Id l Very Small SOIC Package 11.3m @VGS = 10V 7.8A l Low Profile (... See More ⇒

Detailed specifications: IRF8721GPBF , IRF8721PBF , IRF8721PBF-1 , IRF8734PBF , IRF8736PBF , IRF8736PBF-1 , IRF8788PBF , IRF8788PBF-1 , IRFZ44N , IRF8910GPBF , IRF8910PBF-1 , IRF9130SMD , IRF9130SMD05 , IRF9310PBF , IRF9310PBF-1 , IRF9317PBF , IRF9321PBF .

History: IRF8736PBF-1

Keywords - IRF8852PBF MOSFET specs

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