SSH11N90 Specs and Replacement
Type Designator: SSH11N90
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO-3P
SSH11N90 substitution
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SSH11N90 datasheet
Detailed specifications: IRF9395MPBF , IRF9410PBF , IRF9510SPBF , IRF9520NLPBF , IRF9520S , IRF9520SPBF , IRF9530-220M , SSH10N80 , IRF9540 , SSH3N90 , SSH4N55 , SSH4N60 , SSH4N80 , SSH4N90 , SSH5N90 , SSH60N08 , SSH6N80 .
History: IRF1010EZSPBF
Keywords - SSH11N90 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRF1010EZSPBF
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