SSH11N90 Datasheet. Specs and Replacement

Type Designator: SSH11N90  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO-3P

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SSH11N90 datasheet

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SSH11N90

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Detailed specifications: IRF9395MPBF, IRF9410PBF, IRF9510SPBF, IRF9520NLPBF, IRF9520S, IRF9520SPBF, IRF9530-220M, SSH10N80, IRF4905, SSH3N90, SSH4N55, SSH4N60, SSH4N80, SSH4N90, SSH5N90, SSH60N08, SSH6N80

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.